現今在射頻（RF）電路中，壓控頻率振盪器（VCO）為一個關鍵元件，它在許多應用中扮演著關鍵性的角色。其輸出頻率可以通過調整輸入電壓的大小而改變。VCO常用於產生可變頻率的信號，這對於調變、頻率合成和時序控制等應用非常重要。所以本篇論文分別呈現了三篇 VCO與一篇LNA的設計。
首先設計了一個9.90 GHz的駐波振盪器（SWO）。SWO使用一圈雙8字形電感作為波傳輸的傳輸線，並使用三對互補的MOS反相器作為負電阻產生器。這三個反相器放置在電感的內部，以節省晶片面積。製造完成所佔用面積為0.947×0.848平方毫米。在1.2伏特的電源電壓和4.3毫瓦的功耗下，SWO的FOM為-188.59 dBc/Hz。由於使用了8字形電感，SWO具有耦合噪聲壓制的特性。
第二顆晶片為改良第一顆是使用了第一部分作為改良利用multi path的方式改良電感以降低電流於電感的集膚效應。當電源電壓給1.65V時MOSFET會開啟使電感呈短路狀態，此時電源電壓在1.2V時，頻率7.9GHz，功耗為 8.7 mW，而相位雜訊在 1 MHz 時為 -117.5 dBc/Hz、FOM 值為 -184.3 dBc/Hz。而當開關電壓0V時MOSFET會關閉使電感呈斷路狀態，此時電源電壓在0.8V時，頻率3.8GHz，功耗為 3.1 mW，相位雜訊在 1 MHz 時為 -113.8 dBc/Hz、FOM 值為 -181.5 dBc/Hz。
第三與四顆是利用0.18μm CMOS工藝下製造的3.58 GHz LC-tank電壓調控振盪器（VCO）。這個互補式VCO使用一個兩圈的8字形電感作為諧振電感，與可變電容並聯用於頻率調節。由於使用了8字形電感，VCO具有耦合噪聲抑制的特性。NMOS交叉耦合對使用尾電感，而pMOS交叉耦合對則使用源極衰減電感來降低噪聲。這三個電感被放置在同一區域內，以減小晶片的尺寸
最後一部分為提出了一種低雜訊放大器（LNA），採用了雙圈8字形電感進行輸入匹配。8字形電感器使用了兩個串聯的雙圈八邊形電感。為了減少磁場耦合雜訊，採用了完全對稱的雙圈交叉電感。在2.2 GHz頻率下，在0.18 μm的CMOS工藝下，該LNA表現出11.62 dB的增益，3.79 dB的噪聲係數，-12.56 dBm的P-1dB，以及-9.33 dBm的輸入三階截止點（IIP3）用於低頻段。所設計的LNA是一個在4.8 GHz高頻段運行的雙頻段並行LNA。與寬頻LNA相比，多頻段LNA提供了阻帶抑制和耦合抑制。

In today's RF (Radio Frequency) circuits, Voltage-Controlled Oscillators (VCOs) play a crucial role as a key component. They alter their output frequency by adjusting the input voltage. VCOs are commonly used for generating signals with variable frequencies, which is essential for applications such as modulation, frequency synthesis, and timing control. Therefore, this paper presents the designs of three VCOs and one Low-Noise Amplifier (LNA).

First, a 9.90 GHz LC-tank Voltage-Controlled Oscillator (VCO) is designed. This VCO utilizes a single-loop, dual 8-shaped inductor as a transmission line for wave propagation and employs three pairs of complementary MOS inverters as a negative resistance generator. These three inverters are placed inside the inductor to save the chip area. The manufactured VCO occupies an area of 0.947×0.848 mm2, including the buffer area. With a supply voltage of 1.2 volts and a power consumption of 4.3 milliwatts, the Figure of Merit (FOM) for the VCO is -188.59 dBc/Hz. Due to the use of 8-shaped inductors, this VCO exhibits noise coupling suppression characteristics.

The second chip is an improved version of the first one and employs multipath techniques to mitigate skin effect-induced current in the inductor. When the supply voltage is set to 1.65V, the MOSFET switches on, short-circuiting the inductor. At this point, with a 1.2V supply voltage, the frequency is 7.9 GHz, power consumption is 8.7 mW, and the phase noise at 1 MHz is -117.5 dBc/Hz, with an FOM of -184.3 dBc/Hz. When the switch voltage is 0V, the MOSFET turns off, causing the inductor to be open-circuited. In this state, with a 0.8V supply voltage, the frequency is 3.8 GHz, power consumption is 3.1 mW, and the phase noise at 1 MHz is -113.8 dBc/Hz, with an FOM of -181.5 dBc/Hz.

The third and fourth chips are 3.58 GHz LC-tank Voltage-Controlled Oscillators (VCOs) fabricated using a 0.18μm CMOS process. These complementary VCOs employ a two-loop 8-shaped inductor as a resonant inductor, along with variable capacitors for frequency tuning. Due to the use of 8-shaped inductors, these VCOs also exhibit noise coupling suppression characteristics. NMOS cross-coupling utilizes tail inductors, while pMOS cross-coupling utilizes source degeneration inductors to reduce noise. All three inductors are placed in the same region to minimize chip size.

In the final part, the fifth chip presents a Low-Noise Amplifier (LNA) that uses dual-loop 8-shaped inductors for input matching. Two serially connected dual-loop octagonal inductors are used, and fully symmetric dual-loop twisted inductors are employed to minimize magnetic field-coupled noise. At a frequency of 2.2 GHz and using a 0.18 μm CMOS process, this LNA exhibits a gain of 11.62 dB, a noise figure of 3.79 dB, a P-1dB of -12.56 dBm, and an Input Third-Order Intercept Point (IIP3) of -9.33 dBm for the low-frequency band. The designed LNA operates as a dual-band concurrent LNA in the high-frequency band at 4.8 GHz. Compared to a wideband LNA, the multi-band LNA provides band rejection and coupling suppression.

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