寬能隙元件在近幾年中逐漸發展成熟，其中以碳化矽和氮化鎵材料為主的元件，展現出其較低導通損、低切換損，且因其適合用於高頻操作及高功率的應用，因此在許多方面都比發展已久的矽功率開關還要有更佳的特性，得以使電路能實現更為輕薄。
本論文將碳化矽模組使用在雙向串聯諧振轉換器及雙向交錯式降/升壓轉換器中，以期提高切換頻率，並且降低切換損。且兩級電路均使用同步整流技術，以減小輸出大電流時的導通損耗。論文中針對絕緣閘雙極電晶體與碳化矽元件的差別及碳化矽元件於高功率應用下所出現的問題做出探討。本論文以目標35kW做設計，最終實現一台輸入電壓750V轉350~400V輸出的20kW雙向直流隔離型轉換器，實驗結果經驗證後負載超過10kW時，效率均超過97%，最高可達97.87%。

Wide bandgap components are developed prosperously these years. The material of Silicon Carbide and Gallium Nitride components show their low conduction loss and switching loss in high power and high frequency for power converter applications. Therefore, wide bandgap components are more merit than silicon transistors in many application, which can achieve high power density and high conversion efficiency.
This thesis applies SiC module on bi-directional series resonant converter and bi-directional interleaved buck/boost converter in order to reduce the switching loss at higher switching frequency. Synchronous rectifier is utilized on the converter to minimize the conduction loss result from the high output current. This thesis discusses differences between SiC and IGBT and the problems of the SiC module in high power design. Based on 35-kW design, a 20-kW bi-directional isolated DC/DC converter has been built with input voltage 750V and output voltage range 350~400V. The system efficiency is over 97 % at load condition of 10-kW and maximum power efficiency of 97.87%.

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