研究生: |
李庭誼 Ting-Yi Lee |
---|---|
論文名稱: |
基於GaN之數位控制同步整流降壓轉換器研製 Design and Implementation of a GaN-Based Digitally-Controlled Buck Converter with Synchronous Rectification |
指導教授: |
劉益華
Yi-Hua Liu |
口試委員: |
邱煌仁
Huang-Jen Chiu 鄧人豪 Ren-Hao Deng 王順忠 Shun-Zhong Wang 劉益華 Yi-Hua Liu |
學位類別: |
碩士 Master |
系所名稱: |
電資學院 - 電機工程系 Department of Electrical Engineering |
論文出版年: | 2020 |
畢業學年度: | 108 |
語文別: | 中文 |
論文頁數: | 85 |
中文關鍵詞: | 同步整流降壓型轉換器 、雙自由度控制器 、氮化鎵高電子移動率電晶體 |
外文關鍵詞: | synchronous buck converter, two degree of freedom (2DOF), GaN HEMT |
相關次數: | 點閱:512 下載:6 |
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在此研究中,本文實現一基於數位控制1MHz,480W 氮化鎵同步整流降壓轉換器。使用氮化鎵高電子遷移率電晶體(GaN HEMT)原因在於相較於碳化矽電晶體,氮化鎵電晶體的閘極電荷(Qg)以及輸出電容(Coss)大幅降低,氮化鎵具有更低的驅動損耗以及更短的死區時間之電路收益。因此,在高頻應用中,氮化鎵電晶體優於碳化矽電晶體。在實現同步整流降壓轉換器的情況下,使用了兩種控制方法進行比較。其中這些控制方法為通過模擬來進行開發以及驗證。而後在同步整流降壓轉換器上進行單自由度PI和雙自由度PI的應用、測試以及比較。最後根據實驗結果,相較於單自由度PI控制法,雙自由度PI控制法對於安定時間和電壓變動量的改善率為91.19%和37.63%。
In this study, a digitally controlled, 1 MHz, 480 W GaN based synchronous buck converter is implemented. GaN High Electron Mobility Transistors (GaN HEMT) are adopted because they have lower driving loss and shorter deadtime circuit benefits due to significantly reduced gate charge (Qg) and output capacitance (Coss) compared to silicon-based MOSFETS. Hence, GaN HEMTs show significant advantages over silicon-based MOSFETs in high-frequency applications. A comparison among two control strategies is also performed using the implemented synchronous buck converter. These control strategies are developed and validated by simulations. The 1-degree of freedom (DOF) PI, and 2-DOF PI are applied, tested and compared on the synchronous buck converter. According to the experimental results, 2-DOF PI controller can improve the transient time and overshoot by 91.19 % and 37.63 % comparing with 1-DOF PI controller.
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