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研究生: 施英睿
Ying-Jui Shih
論文名稱: 針對SLC/MLC雙模式快閃記憶體減少寫入放大之研究
Mitigating the Write Amplification Problem of Dual-mode Flash Memory
指導教授: 謝仁偉
Jen-Wei Hsieh
口試委員: 謝仁偉
Jen-Wei Hsieh
黃元欣
Yuan-Shin Hwang
吳晉賢
Chin-Hsien Wu
陳雅淑
Ya-Shu Chen
學位類別: 碩士
Master
系所名稱: 電資學院 - 資訊工程系
Department of Computer Science and Information Engineering
論文出版年: 2019
畢業學年度: 107
語文別: 英文
論文頁數: 50
中文關鍵詞: 快閃記憶體寫入放大
外文關鍵詞: Write Amplification, Flash Storage device, Solid-State Drive, Storage Systems
相關次數: 點閱:818下載:2
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  • To increase the write performance on MLC
    ash memory, the conventional
    method will convert the MLC block to the SLC-mode block. Because the
    SLC-mode block only uses two threshold voltage status, it has better write
    performance. Then, the SLC-mode block will be used to absorb the por-
    tion coming request. By this way, it also increases write ampli cation. We
    proposed a new idea to reduce write ampli cation in this case. The paper
    has two ways to achieve the goal. The rst is the encoding scheme. The
    second is the SLC block allocation. The encoding scheme changes the bits
    of each voltage status. The SLC block allocation will use a new block mode
    (refer as SLC-mode reprogram) to allocate. The two ways can reduce write
    ampli cation and increase performance. We use the average write response
    time to evaluate performance. The block erase count and write ampli cation
    are used to evaluate the
    ash memory lifetime. Evaluation shows the write
    ampli cation can reduce the most up to 55% in our scheme. For the average
    write response time, our proposed scheme can reduce the most up to 51%.
    For the block erase count, our proposed scheme can reduce the most up to
    46%.


    To increase the write performance on MLC
    ash memory, the conventional
    method will convert the MLC block to the SLC-mode block. Because the
    SLC-mode block only uses two threshold voltage status, it has better write
    performance. Then, the SLC-mode block will be used to absorb the por-
    tion coming request. By this way, it also increases write ampli cation. We
    proposed a new idea to reduce write ampli cation in this case. The paper
    has two ways to achieve the goal. The rst is the encoding scheme. The
    second is the SLC block allocation. The encoding scheme changes the bits
    of each voltage status. The SLC block allocation will use a new block mode
    (refer as SLC-mode reprogram) to allocate. The two ways can reduce write
    ampli cation and increase performance. We use the average write response
    time to evaluate performance. The block erase count and write ampli cation
    are used to evaluate the
    ash memory lifetime. Evaluation shows the write
    ampli cation can reduce the most up to 55% in our scheme. For the average
    write response time, our proposed scheme can reduce the most up to 51%.
    For the block erase count, our proposed scheme can reduce the most up to
    46%.

    1 Introduction 2 Background 3 Motivation 4 Fast and Reused Program Method 4.1 Overview 4.2 System Architecture 4.3 Encoding Scheme 4.4 Block Allocation 4.5 Garbage Collection 4.6 Examples of Write Request 5 Evaluation 5.1 Experimental Setup 5.2 Trace Characteristic 5.3 Experimental Result 5.3.1 Write Ampli cation 5.3.2 Average Write Response Time 5.3.3 Block Erase Count 6 Conclusion

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