簡易檢索 / 詳目顯示

研究生: 管元弘
Yuan-Hung Kuan
論文名稱: Double Circular Caching Scheme for DRAM/PRAM Hybrid Cache
Double Circular Caching Scheme for DRAM/PRAM Hybrid Cache
指導教授: 謝仁偉
Jen-Wei Hsieh
口試委員: 施吉昇
Chi-Sheng Shih
張原豪
Yuan-Hao Chang
陳雅淑
Ya-Shu Chen
學位類別: 碩士
Master
系所名稱: 電資學院 - 資訊工程系
Department of Computer Science and Information Engineering
論文出版年: 2012
畢業學年度: 100
語文別: 英文
論文頁數: 46
中文關鍵詞: PRAMhybrid cachereplacement strategy
外文關鍵詞: PRAM, hybrid cache, replacement strategy
相關次數: 點閱:220下載:1
分享至:
查詢本校圖書館目錄 查詢臺灣博碩士論文知識加值系統 勘誤回報

DRAM is widely adopted as a cache for secondary storage due to its small access latency. Compared with DRAM, PRAM draws a lot of attention recently, since it provides higher density and has no need to refresh the capacitor charge periodically. The non-volatile nature of PRAM can even reduce compulsory miss, which cannot be avoided by DRAM cache. However, PRAM cache cannot replace DRAM cache due to its endurance issue. Thus DRAM/PRAM hybrid cache becomes a good alternative for traditional DRAM cache. Least recently used (LRU) replacement algorithm and CLOCK-Pro algorithm work well for traditional DRAM cache. But these algorithms shall not be directly applied to DRAM/PRAM hybrid cache since the characteristics of PRAM are not considered. This paper proposed a double circular caching scheme (DCCS) to manage DRAM/PRAM hybrid cache. In our scheme, cached data migrate between DRAM cache and PRAM cache adaptively to achieve good hit ratio while frequent writes to PRAM cache are avoided for endurance concern. The experimental results showed that our scheme can reduce up to 87.10% PRAM write accesses for read-intensive access pattern and up to 44.90% energy consumption for write-intensive access pattern, compared with other caching schemes.


DRAM is widely adopted as a cache for secondary storage due to its small access latency. Compared with DRAM, PRAM draws a lot of attention recently, since it provides higher density and has no need to refresh the capacitor charge periodically. The non-volatile nature of PRAM can even reduce compulsory miss, which cannot be avoided by DRAM cache. However, PRAM cache cannot replace DRAM cache due to its endurance issue. Thus DRAM/PRAM hybrid cache becomes a good alternative for traditional DRAM cache. Least recently used (LRU) replacement algorithm and CLOCK-Pro algorithm work well for traditional DRAM cache. But these algorithms shall not be directly applied to DRAM/PRAM hybrid cache since the characteristics of PRAM are not considered. This paper proposed a double circular caching scheme (DCCS) to manage DRAM/PRAM hybrid cache. In our scheme, cached data migrate between DRAM cache and PRAM cache adaptively to achieve good hit ratio while frequent writes to PRAM cache are avoided for endurance concern. The experimental results showed that our scheme can reduce up to 87.10% PRAM write accesses for read-intensive access pattern and up to 44.90% energy consumption for write-intensive access pattern, compared with other caching schemes.

1 Introduction 1 2 Background 4 2.1 Related Work...............................................4 2.1.1 LRU Replacement Algorithm...............................4 2.1.2 CLOCK-Pro Replacement Algorithm.........................5 2.1.3 Migration Based Page Caching Algorithm..................5 2.2 Next-Generation Non-Volatile Memory........................6 2.2.1 Magnetoresistive Random Access Memory...................6 2.2.2 Ferroelectric RAM.......................................7 2.2.3 Phase-Change memory.....................................7 3 Double Circular Caching Scheme 9 3.1 Data Structure............................................10 3.2 DCCS: Double Circular Caching Scheme......................11 3.2.1 DRAM Replacement Strategy..............................13 3.2.2 PRAM Replacement Strategy..............................14 3.3 An Illustrative Example...................................16 4 Performance Evaluation 19 4.1 DRAM Cache vs. DRAM/PRAM Hybrid Cache.....................23 4.2 Different Configurations for DCCS.........................24 4.3 Comparisons with Other Caching Schemes....................30 5 Conclusion 35

[1] K. GREENE. (2008, 2) A memory breakthrough. [Online]. Available: http://www.technologyreview.com/Infotech/20148/
[2] Numonyx. (2008, 2) Intel, stmicroelectronics deliver industry’s first phase change memory prototypes. [Online]. Available: http://www.intel.com
[3] S. Electronics. (2010, 4) Samsung ships industry’s first multi-chip package with a pram chip for handsets. [Online]. Available: http://www.samsung.com
[4] Y. Choi, I. Song, M.-H. Park, H. Chung, S. Chang, B. Cho, J. Kim, Y. Oh, D. Kwon, J. Sunwoo, J. Shin, Y. Rho, C. Lee, M. G. Kang, J. Lee, Y. Kwon, S. Kim, J. Kim, Y.-J. Lee, Q. Wang, S. Cha, S. Ahn, H. Horii, J. Lee, K. Kim, H. Joo, K. Lee, Y.-T. Lee, J. Yoo, and G. Jeong, “A 20nm 1.8v 8gb pram with 40mb/s program bandwidth,” in Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2012 IEEE International, feb. 2012, pp. 46 –48.
[5] D. Ahn, S. Cho, H. Horii, D. Im, I.-S. Kim, G. Oh, S. Park, M. Kang, S. Nam, and C. Chung, “Pram technology: from non-volatility to high performances,” Proceedings of European Phase Change and Ovonics Symposium (E/PCOS), vol. 9, pp. 87–91, 2010.
[6] I. Kim, S. Cho, D. Im, E. Cho, D. Kim, G. Oh, D. Ahn, S. Park, S. Nam, J. Moon, and C. Chung, “High performance pram cell scalable to sub-20nm technology with below 4f2 cell size, extendable to dram applications,” in VLSI Technology (VLSIT), 2010 Symposium on, june 2010, pp. 203 –204.
[7] J. S. Park, H.-S. Kim, K.-S. Chung, and T. H. Han, “Pram and nand flash hybrid architecture based on hot data detection,” in Mechanical and Electronics Engineering (ICMEE), 2010 2nd International Conference on, vol. 1, aug. 2010, pp. V1–93 –V1–97.
[8] J. K. Kim, H. G. Lee, S. Choi, and K. I. Bahng, “A pram and nand flash hybrid architecture for high-performance embedded storage subsystems,” in Proceedings of the 8th ACM international conference on Embedded software, New York, NY, USA, 2008, pp. 31–40.
[9] G. Dhiman, R. Ayoub, and T. Rosing, “Pdram: A hybrid pram and dram main memory system,” in Design Automation Conference, 2009. DAC ’09. 46th ACM/IEEE, july 2009, pp. 664–669.
[10] M. K. Qureshi, V. Srinivasan, and J. A. Rivers, “Scalable high performance main memory system using phase-change memory technology,” The ACM Special Interest Group on Computer Architecture (SIGARCH), vol. 37, no. 3, pp. 24–33, Jun. 2009.
[11] H. Seok, Y. Park, and K. H. Park, “Migration based page caching algorithm for a hybrid main memory of dram and pram,” in Proceedings of the 2011 ACM Symposium on Applied Computing, 2011, pp. 595–599.
[12] S. Jiang, F. Chen, and X. Zhang, “Clock-pro: an effective improvement of the clock replacement,” in Proceedings of the annual conference on USENIX Annual Technical Conference, 2005, pp. 35–35.
[13] R. C. Sousa and I. L. Prejbeanu, “Non-volatile magnetic random access memories (mram),” Comptes Rendus Physique, vol. 6, no. 9, pp. 1013–1021, 2005.
[14] A. Sheikholeslami and P. G. Gulak, “A survey of circuit innovations in ferroelectric random-access memories,” Proceedings of the IEEE, vol. 88, no. 5, pp. 667 –689, may 2000.
[15] S. Thoziyoor, J. H. Ahn, M. Monchiero, J. B. Brockman, and N. P. Jouppi, “A comprehensive memory modeling tool and its application to the design and analysis of future memory hierarchies,” in Computer Architecture, 2008. ISCA ’08. 35th International Symposium on, june 2008, pp. 51 –62.
[16] R. Bez and A. Pirovano, “Non-volatile memory technologies: emerging concepts and new materials,” Materials Science in Semiconductor Processing, vol. 7, no. 4, pp. 349–355, 2004.
[17] X. Yu, Semicondutor Memories, Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY 14627 USA, 12 2006.
[18] Umasstracerepository. [Online]. Available: http://traces.cs.umass.edu/index.php/Storage/Storage
[19] L.-P. Chang and T.-W. Kuo, “An adaptive stripping architecture for flash memory storage systems of embedded systems,” in IEEE Eighth Real-Time and Embedded Technology and Applications Symposium (RTAS), Sept. 2002.
[20] L.-P. Chang, “A hybrid approach to nand-flash-based solid-state disks,” IEEE Transactions on Computers, vol. 59, no. 10, pp. 1337 –1349, oct. 2010.
[21] L.-P. Chang and C.-D. Du, “Design and implementation of an efficient wear-leveling algorithm for solid-state-disk micro-controllers,” ACM Transactions on Design Automation for Electronic Systems, vol. 15, no. 1, pp. 1 –36, dec. 2009.
[22] J. L. Hennessy and D. A. Patterson, Computer Architecture: A Quantitative Approach (Fifth Edition). Morgan Kaufmann Publishers, 2012.

QR CODE