陣列波導光柵（AWG）與階梯光柵（Echelle Grating）通常用於分波多工（WDM）系統光訊號的多工及解多工處理，兩種元件運作原理都基於光陣列的干涉，但路徑之間延遲是以不同方式實現的。本論文首先介紹這兩種光濾波元件基本原理與模擬分析方法，接著特別討論AWG於生醫領域之空間域光學同調斷層掃描（SD-OCT）系統之應用。詳細展示元件設計優化過程，並進一步結合多模干涉儀（MMI）作為輸入端口，以得到平頂帶寬的輸出頻譜。經由商業模擬軟體Photon Design中之EPIPPROP與FIMMPROP軟體進行模擬，分別設計密波長多工（DWDM）及粗波長多工（CWDM）功能的光元件。
設計之元件除了於比利時微電子研究中心（IMEC）進行代工外，更於台灣半導體研究中心（TSRI）進行製程的研發。我們也將探討使用E-beam電子束直寫系統與I-line光學步進機，來製作矽線波導為主之光元件，並使用乾氧製程改善波導側壁粗糙度來降低傳輸損耗。
本論文成功使用I-line光學步進機製作出CWDM與DWDM功能之AWG元件，並量測出其於C-band波段下之通道間距分別為19 nm與0.75 nm。更進一步在改善波導側壁粗糙度後，量測出E-beam製程直波導於波長為1550 nm時，傳播損耗為2.93 dB/cm。

Arrayed Waveguide Grating (AWG) and Echelle Grating (EG) are commonly utilized for multiplexing and demultiplexing in wavelength division multiplexing (WDM) communications. Both filter devices are using optical array interference, but the implementation of light path delay is different. Firstly, the principle and simulation for AWG and EG will be introduced in this thesis. And then the AWG application in spectral domain optical coherence tomography (SD-OCT) is going to be further discussed. Next, the process design to improve the filter device performance will be demonstrated. Additionally, the AWG with a multimode interference (MMI) at the entrance port of the waveguide array could be illustrated to obtain the flattened spectral response, followed by the dense and coarse WDM demultiplexers. All simulations were executed by Photon Design’s commercial software through EPIPPROP and FIMMPROP.
The silicon wire based photonic devices mentioned in the thesis are not only sent to the Interuniversity Microelectronics Centre (IMEC) for process, but also fabricated in Taiwan Semiconductor Research Institute (TSRI). In TSRI. the process between the I-line stepper and electron beam writing system will be further discussed and demonstrated. The waveguide sidewall roughness improvement is analyzed on dry thermal oxidation.
In this thesis, the AWG channel spacing for CWDM and DWDM were successfully demonstrated as 19 nm and 0.75 nm in the C-band, respectively, using the I-line stepper lithography. Furthermore, the silicon wire sidewall roughness was improved in the E-beam process to achieve the propagation loss of 2.93 dB/cm in the 1550-nm wavelength range.

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