金屬氧化物半導體薄膜電晶體（Oxide-TFT）由於其高載子遷移率、高可見光透明性、大面積均勻性、低溫製成及低漏電流…等，於近年來常被應用於大尺寸面板甚至是攜帶型產品中作為驅動或是補償電路的元件使用，不過由於顯示器開始朝向高解析度及高畫面更新率做發展，電晶體的載子遷移率勢必須要進一步的提升，因此，本論文將以提升金屬氧化物薄膜電晶體之載子遷移率作為研究的主軸，相較於常見的氧化銦鎵鋅，氧化銦鋅錫擁有先天上較高遷移率的優勢，利用其特點同時搭配金屬覆蓋層，進一步提升主動層的載子濃度，來達成目標。
首先，我們利用調變氧化銦鋅錫在磁控濺鍍生長時的氧氣流量及濺鍍功率，分析在不同製程條件下元件在電特性上的表現，找出最佳主動層製程參數，並針對薄膜進行AFM、XRD等材料分析，接著，為了進一步提升載子遷移率，我們以搭配鋁(Al)金屬覆蓋層來實現，探討其覆蓋面積、覆蓋厚度及後退火參數對於元件電性的影響，比較出各種參數調變下的電特性差異，同時以XPS材料分析來證明，找出擁有最佳特性的調變參數，其載子遷移率高達58.76(cm2 / V∙s)。

Metal-oxide Thin-Film Transistors (Oxide-TFTs) have been used in large-sized panels in recent years due to their high carrier mobility, high visible light transparency, large-area uniformity, and low-temperature fabrication, and low leakage current. It is even used as the component of a driving or compensation circuit for portable devices. However, as displays begin to develop towards high resolution and high refresh rate, the carrier mobility of transistors must be further improved. Therefore, in this work, we will focus on the research of improving the carrier mobility of metal oxide thin-film transistors.
First, we use the modulation of the oxygen flow rate and sputtering power of indium zinc tin oxide during magnetron sputtering to analyze the electrical characteristics of the device under different process conditions, find the best active layer process parameters, and AFM and XRD material analysis of thin films, then, to further improve the carrier mobility, we implemented it with an aluminum (Al) metal capping layer and discussed the influence of its coverage area, thickness and post-annealing parameters on the electrical properties of the device. The differences in electrical characteristics under various parameter modulations were compared, and the XPS material analysis was used to prove that the modulation parameters with the best characteristics were found, and the carrier mobility was as high as 58.76 (cm2 / V∙s).

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