近年來，有機非揮發性晶體管記憶裝置已經得到廣泛的發展。根據不同概念，學術界對電荷儲存層進行了各種結構設計。然而，在有機材料中，目前還沒有針對隧道層及其對電晶體記憶裝置穿隧效應的影響進行研究。在本論文中，我們介紹了一種基於隧道效應的新型光誘導非揮發性有機電晶體記憶體，SiO2 和並五苯之間的超薄有機聚合物駐極體被用作隧道層，以實現新型有機電晶體記憶體。本研究主要集中在利用不同能隙的材料，具體而言是具有不同共軛長度的共軛聚合物，如聚苯乙烯（PS）、聚(2-乙烯基萘)（P2VN）和聚(2-乙烯基蒽)（P2VAn），作為非揮發性晶體管記憶裝置的穿隧層。目的是通過改變側鏈共軛長度來控制具有相似化學性質的能帶隙，以觀察隧道效應對非易失性有機存儲器件的影響。在穿隧層於15奈米內時，可以通過隧穿增強的超薄聚合物駐極體實現寫入速度小於1秒和驅動電壓低於20伏。在讀取電壓=0V的條件下，電荷保持時間超過104秒，電流開關比超過106。再通過全面的研究之後，我們成功地探索了穿隧層能隙對這些電晶體記憶體中隧道效應的影響，低帶隙材料有利於更快的寫入速度和更低的驅動力，而高帶隙材料有利於保留捕獲的電荷。此外，通過在隧道層中混合具有高和低能隙的材料PS和P2VAn，我們能夠為非揮發性晶體管記憶裝置建立更有利的條件，例如在1秒的光輔助寫入下具有30伏以上的記憶窗口。為這一領域的進一步發展開闢了可能性。

Recently, the organic non-volatile transistor memory device has been widely developed, varied structure designs for charge storage layer based on different concepts, however, there is no such research focus on the tunneling layer and its influence on the tunneling effect of transistor memory device in organic material. In this thesis, an ultra-thin tunneling layer between SiO2 and Pentacene was employed in a conventional OFET device. The study primarily focuses on the utilization of controlled bandgap materials, specifically conjugated polymers with varying conjugation lengths, such as Polystyrene (PS), Poly(2-vinyl naphthalene) (P2VN), and Poly(2-vinyl anthracene) (PVAn), as the tunneling layer in nonvolatile transistor memory devices. The objective is to control the energy bandgap with similar chemical properties by varied side chain conjugation lengths to observate the influence of .tunneling effect on non-volatile organic memory devices. Writing speeds less than 1 second and driving voltage below 20 volts can be achieved with tunneling-boosted ultra-thin polymer electret within 15 nm. Retention time is over 104 s with ON/OFF ratio 106 at Vg.read = 0V. Through comprehensive investigations, we successfully explored the influence of the tunneling layer's bandgap on the tunneling effect within these memory devices, low bandgap material is favored to faster writing speed and lower driving force, with high bandgap material is to preserve the trapped charges. Furthermore, by blending materials with high and low bandgaps in the tunneling layer, we were able to establish more advantageous conditions for nonvolatile transistor memory devices, for instance, having memory window over 30V with 1 s photo-assist writing. Opening up possibilities for further advancements in this field.

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