光電芬頓法是藉由光能及電能使系統反應時產生活性極強的氫氧自由基，進而對系統產生氧化還原反應操作之處理程序。而陰極電極對光電芬頓系統性能具相當之影響性，本研究使用具有良好加工性與高導電性能之SS316L不銹鋼為電極基材，並以具無毒、成本低、高化學穩定性及高氧化能力之二氧化鈦及具備化學穩定性及抗腐蝕性之二氧化鈰進行基材表面修飾。實驗過程藉由田口方法進行陰極極板製備參數最佳化，並觀察系統電化學特性與電芬頓系統對羅丹明B (Rhodamine, RhB)染料降解之效能。
實驗包含(1)紫外/可見光分光光度計分析電極吸收光譜及能帶間隙；(2)掃描式電子顯微鏡觀察電極表面織構及表面孔隙率；(3)接觸角量測分析儀量測電極表面親水性；(4) X光繞射儀分析二氧化鈰及二氧化鈦粉體結晶相；(5)動電位極化曲線分析電極抗腐蝕性；(6)光電芬頓及光催化系統降解RhB染料脫色效率。
結果顯示，3TiO2：1CeO2/SS316L-450℃擁有最佳光吸收波長380 nm及最低能帶間隙2.85 eV，且具最高表面孔隙率7.30%。3TiO2：1CeO2/SS316L-450 ℃電極經30分鐘光電芬頓系統降解RhB染料脫色率可達88.825%，相較於未經修飾的SS316L不銹鋼電極提升1.78倍。顯示，3TiO2：1CeO2經450℃鍛燒後修飾SS316L不銹鋼電極於光電芬頓系統陰極降解RhB染料廢水之性能具大幅提升，具備未來應用於光電芬頓電極材料之發展價值。

Photoelectro Fenton method is a process to produce the extremely active hydroxyl radical with light energy and electric energy, and then degrading dye to overall system. Furthermore, the cathode electrode plays an important role in Fenton system. In this study, we used stainless steel, SS316L, which has high processability and high conductivity as the substrate, and executed the surface modification with Titanium dioxide which is non-toxic, inexpensive, highly chemical stable, and has high oxidizing ability, and Cerium oxide which has chemical stability and corrosion resistance. The parameters were prepared by using Taguchi method to optimize the cathode plate, then observing the electrochemical properties of the system and the efficiency of RhB dye degraded with Electro Fenton system.
The experiment included： (1)UV-VIS for Band gap measurement；(2) SEM for surface morphology observation of electrodes；(3) Contact angle measuring instrument for the hydrophilicity of the surface；(4) XRD for Lattice structure measurement；(5) Dynamic polarization curves for electrode corrosion resistance measurement；(6) Decolorization rate for efficiency in the Photo-Electro-Fenton system.
The results of this study shows that 3TiO₂：1CeO₂/SS316L-450 ℃ has the maximum light wavelength absorption with 380 nm, 2.85 eV as it’s minimum band gap, and the highest surface porosity, 7.30%. Furthermore, the RhB dye decolorization of 3TiO₂：1CeO₂/SS316L-450 ℃ electrode could be reached to 88.825% after 30 minutes with Photoelectro Fenton system degradation, which was 1.78 times greater than the SS316Lwithout modification. The results indicated that the efficiency of the RhB dye wastewater cathode degradation with SS316L electrode modified with 3TiO₂：1CeO₂/SS316L-450℃ in Photoelectro Fenton system got greatly improved. Therefore, using 3TiO₂：1CeO₂/SS316L-450℃ as electrode matirial possess developmental potential in the application of Photoelectro Fenton system.

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