除了工業上的應用以外，遠紅外線熱輻射發光元件在醫療上已有許多應用，例如增加血液循環、加速傷口復原等。而為了使之更廣泛的運用在生活中，降低成本以及大量製造便是重要的課題之一。
本論文主要在改善先前製作之遠紅外線熱輻射發光元件的問題，針對其熱均勻度及發光效率做改良，設計十五種不同的元件參數來進行比較。本次與前次元件皆利用現有的0.18 µm CMOS標準製程製作，以達到好的製程穩定性、低成本及大量製造的目標。
本次重新設計加熱絲形狀，以螺線型取代先前的蛇線形，以達到表面溫度均勻分布的目的；加熱材料改用正電阻溫度係數的金屬材料，其電阻與溫度成正比，高溫時能抑制輸入電流，避免元件過載而損毀。其中部分的設計利用晶圓廠提供之MEMS後製程技術，將加熱絲底下之基板挖空，以空氣隔絕熱能，防止熱能往基板散失，進而比較挖空與否的效率差異。
本次元件經量測後，發光效率皆比前次元件高，發光波段皆落在8 µm以後，熱分佈也較均勻，元件在5V的偏壓下最高可達到5.7×10-5的發光效率，功率密度為2.48 mW/cm2。不同元件的比較結果中，有挖空基板的元件有良好的熱侷限性，而在定電壓且相同線寬的前提下，電阻較小其效率較好；而在定電壓且相同尺寸的前提下，較大的電阻有較好的耐壓性。

Besides the industrial applications, far-infrared (FIR) thermal emitters are useful in medical applications, for example, to enhance blood circulation and accelerate wound healing. Reducing costs and mass production are the keys to make FIR emitters wide-spreading in various applications.
This work aims to develop far-infrared thermal emitters with enhanced thermal uniformity and luminous efficiency. Fifteen components of different parameters are designed and fabricated for performance comparisons. The components are manufactured using the existing standard 0.18 µm CMOS process to achieve good process stability, low cost, and large-scale manufacturing goals.
The heating wire is designed as spiral shape rather than the previous U-shape in order to have uniform temperature distribution. The metal layer is adopted as the heating material and it has a positive temperature coefficient of resistance. After applying a voltage to the metal layer, the temperature starts to rise and thus increases the electric resistance. It could suppress the input current and prevent the device overload and burnout when the temperature is high. Some of these designs require the MEMS process technology provided by the MPW service to etch hollows and remove the substrate under the heating wires. This is for providing thermal isolation to improve the heating efficiency.
After measuring all the thermal emitters, the luminous efficiency is higher than the previous work. The optical spectra are above 8 µm of wavelength. The maximum luminous efficiency is 5.7×10-5 at a bias voltage of 5 V. The power density was 2.48 mW/cm2, and the surface temperature distribution is very uniform. Compare of different thermal emitters, we find that etched hollows can provide good thermal isolation. The devices with the same line width and material but smaller resistance values generate higher luminous efficiency at a fixed voltage. The devices with the same chip size but larger resistance values can tolerate a larger applied voltage.

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