焊料/基板耦合界面中的大塊金屬間化合物厚度往往會降低焊點的可靠性並表現出較差的機械性能。擴散阻擋層的作用可以通過形成相抑制金屬間化合物層的生長或抑制金屬間化合物層的厚度。然而，在 Sn-9Zn/Cu 偶合界面上形成的 Cu-Zn 金屬間化合物可能會抑制金屬間化合物的生長和 Cu-Sn 相的形成。對 SZ/C1990 HP、SZ/C194 和 SZ/Alloy 25 對在固/固反應過程中的 IMC 生長進行了動力學分析，該過程在 240℃回流 15s 和 100 至 2000 h 等溫時效期間進行。在 SZ/C1990 HP 電偶中，ε-CuZn5 和 γ-Cu5Zn8 相在早期形成，並且在較高的反應溫度和時間下，ε-CuZn5 相轉變為 γ-Cu5Zn8 相。在 SZ/C194 對中，只有 γ-Cu5Zn8 相在老化早期形成。 Sn 隧穿現象促進了在較高溫度和反應時間下形成的 Cu-Sn 金屬間化合物相。 η-Cu6Sn5相的金屬間化合物在富Sn基體周圍生長並消耗C194基體中的Cu原子。在 SZ/Alloy 25 對中，ε-CuZn5 和 γ-Cu5Zn8 相在時效早期形成，並且在較高的反應溫度和時間下仍然觀察到，這對中沒有相變。所有反應對的 IMC 生長都被認為是擴散控制機制。整體 IMC 生長所需的活化能在 SZ/C1990 HP 上為 51.5 kJ/mol，在 SZ/C194 上為 87.0 kJ/mol，在 SZ/Alloy 25 上為 45.7 kJ/mol

Bulk intermetallic thickness in solder/substrate couple interface tends to degrade the solder joint reliability and perform poor mechanical properties. The role of diffusion barrier layer could inhibit the growth of the intermetallic layer by forming phases or suppressed the thickness of the intermetallic layer. However, Cu-Zn intermetallic phase that form on Sn-9Zn/Cu couples interface may inhibit the growth of the intermetallic and Cu-Sn phase formation. A kinetic analysis of the IMC growth between SZ/C1990 HP, SZ/C194 and SZ/Alloy 25 couples during solid/solid state reaction was performed during reflow at 240℃ for 15s and isothermal aging from 100 to 2000 h. In the SZ/C1990 HP couples, the ε-CuZn5 and γ-Cu5Zn8 phases were formed at early stage and the ε-CuZn5 phase was transformed to γ-Cu5Zn8 phase at higher reaction temperature and time. In the SZ/C194 couples, only γ-Cu5Zn8 phase formed at early stage of aging. The Sn tunneling phenomena promotes Cu-Sn intermetallic phase formed at the higher temperature and reaction time. The intermetallic of η-Cu6Sn5 phase was grew around the Sn-rich matrix and consume the Cu atom in C194 substrate. In the SZ/Alloy 25 couples, the ε-CuZn5 and γ-Cu5Zn8 phases were formed at early stage of aging and still observed at higher reaction temperature and time, there is no phase transformation in this couples. IMC growth for all the reaction couples were concluded as diffusion-controlled mechanism. The activation energy required for overall IMC growth was at 51.5 kJ/mol on SZ/C1990 HP, 87.0 kJ/mol on SZ/C194 and 45.7 kJ/mol on SZ/Alloy 25 couples

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