In this study, ZnO nanoparticles doped by Al and Ga were prepared by a wet process. Then the performance of Al doped ZnO composite would be evaluated and analyzed The main purpose of this study was to investigate The effects of Al morphological properties of ZnO:Al and ZnO:Ga nanopowders. Objectives of this study are as following: analyzing of structural and dimensional of particles properties of ZnO:Al and ZnO:Ga prepared by the wet process. Crystallites (grain) size from XRD data using Scherrer equation AZO at 2 %, 3 %, 4 %, and 5 % (50 nm, 19 nm, 18 nm, and 4 nm) and GZO at 2 %, 3 %, 4%, and 5 % (59 nm, 37 nm, 20 nm, and 6 nm). The crystallite size of AZO particles decreased with increasing Al and Ga concentration. Morphological properties were characterized by scanning electron microscope (SEM). When the Al doping and Ga concentration increases from 2% to 5%, their nanostructures have sharper lines. The effect of Al doping on the optical properties of ZnO thin films was investigated describing the optical transmittance and optical reflectance spectra of Al-doped ZnO sample this range. 3.46 (Al 2 %), 3.67 (3 %), 3.68 (4 %), and 3.73 (5 %); and 3.53 (Ga 2 %), 3.55 (3 %), 3.58 (4 %), and 3.61 (5 %). The absorption spectra shifted towards the lower wavelength as the doping concentration increased. FTIR spectra suggested the formation of the wurtzite in both of the ZnO and the ZnO:Al. The presence of Al in ZnO lattice was confirmed by the peaks around 578, 688, and 1171 cm-1. Electrochemical properties were measured by cyclic voltammetry, and ZnO, ZnO:Al, and ZnO:Ga with doping concentration of 2 %, 3 %, 4 %, and 5 % showed pseudocapacitive nature, and the electrical current density increased as the doping concentration increased, which suggests the doping increased the electric conductivity of the materials.

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