本研究分為三個部份，分別是建立三維準穩態分子靜力學奈米級研磨切削模式、化學機械研磨研磨墊具有方格子花紋時研磨藍寶石晶圓之研磨深度的理論模型、以及多參數修正式TRIZ多重工程分析方法，針對這三個部份進行模擬分析與實驗驗證。這三個部份圍繞著一個核心主題，即是化學機械拋光研磨切削藍寶石晶圓。
化學機械拋光研磨切削藍寶石晶圓，其切削行為是三維的模式。故本文發展建立三維奈米尺度準穩態分子靜力學研磨切削模式。探討單一研磨顆粒研磨切削過程中，先是下壓工件到固定深度後，在研磨工件的研磨切削行為、三個軸向作用力的變化，以及工件中間截面的等效應變、等效應力的分佈趨勢。做為化學機械拋光研磨藍寶石晶圓時的參考，以減少破裂的機率。此外本文採用AFM定壓力奈米切削實驗，採用一種新的比下壓能的方法，以比下壓能實驗數據及公式來驗證本文所建立的奈米級研磨切削模擬模式為合理的。
接著建立一個新的研磨墊具有方格子花紋時，化學機械拋光研磨切削藍寶石晶圓的研磨移除深度理論模型，此理論模型結合一種應用二值化影像畫素分割的單位時間增量的研磨次數分析模式，與單一像素多研磨顆粒之接觸模式。本研究應用此理論模型，探討傳統化學機械拋光研磨時使用不同體積濃度與不同研磨粒直徑，以及使用倒置式化學機械拋光進行相同研磨粒直徑及體積濃度之研磨移除深度數值模擬分析。模擬的結果不但可得到晶圓的平均研磨移除深度，並可獲得晶圓概略的表面狀況。本文並進行傳統化學機械抛光實驗，比較模擬結果與實驗結果，驗證本研究所建立之藍寶石晶圓研磨移除深度理論模型之合理性。
最後，以前述的倒置式化學機械拋光之研磨移除深度理論模型的數值模擬結果為分析改善對象。使用多參數修正式TRIZ多重工程分析方法，結合倒置式化學機械拋光之研磨移除深度理論模型，進行改善倒置式化學機械拋光研磨藍寶石成碗形晶圓的研磨次數不均勻的現象，進而改善晶圓的平坦度。

The study includes three parts, those are the nanoscale abrasive cutting model of three-dimensional quasi-steady molecular statics, the theoretical model of abrasive depth for polishing of sapphire wafer by the chemical mechanical polishing polishing pad with cross pattern, and the modified TRIZ clustering method to propose the modified TRIZ multi-engineering steps analysis method for multiple parameters. Therefore, proceeding the simulation analysis and experimental verification for these three parts. These three parts around a core topic, that is, chemical mechanical polishing abrasive cutting sapphire wafer.
The cutting behavior of the chemical mechanical polishing abrasive cutting sapphire wafer is a three dimensional model. Therefore, the study employs the nanoscale abrasive cutting model of three-dimensional quasi-steady molecular statics to analyze the abrasive cutting behavior at the three stages of abrasive cutting process, including down pressing stage, and early stage and final stage of abrasive cutting, and also analyzes the trends of action force in different directions at the three stages of abrasive cutting process. Having obtained the action force, the study further analyzes the distribution trends of the equivalent stress and equivalent strain on the central section of sapphire wafer. The analysis results can be used as the reference when abrasive cutting sapphire wafer to reduce the chance of fracture. Besides, through AFM nanocutting experiment at a fixed down force, a method of new specific down force energy is used to verify that the simulation model of nanoscale abrasive cutting is reasonable.
Then, the study combines the theoretical model of polishing times with the contact model of single-pixel multiple abrasive particles to establish a new theoretical model of abrasive depth for polishing of sapphire wafer by the chemical mechanical polishing that polishing pad with cross pattern. Base on the theoretical model, the study carries out numerical simulation with the slurry of the same volume concentration but with different abrasive particle diameters, the same abrasive particle diameter but with different volume concentrations for the traditional chemical mechanical polishing. And the study also carries out numerical simulation with the slurry of the same volume concentration and the the same abrasive particle diameter for the compensated chemical mechanical polishing. The simulation results not only can acquire the average abrasive removal depth at each pixel position, but also can acquire the surface condition of wafer. Through chemical mechanical polishing experimental data analysis, it can verify the rationality of the wafer abrasive depth model established by this study.
Finally, based on the above analysis results of compensated chemical mechanical polishing, the study combines the compensated chemical mechanical polishing theoretical model of abrasive removal depth of sapphire wafer polished by polishing pad with cross pattern with the modified TRIZ multi-engineering steps analysis method for multiple parameters to proceed improvement analysis. The results of the analysis show it can make the distribution of polishing times of sapphire wafer evener, and further improve the flatness and reduce the requiring polishing time.

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