本論文探討以不同氧流量成長奈米鑽石薄膜且以退火熱處理改變薄膜品質，之後再成長氧化鋅奈米柱於以上參數所成長之奈米鑽石薄膜上，最後以不同溫度進行二次退火，再以FE-SEM、AFM、Raman、XRD、PL、Photodetector等分析判定薄膜品質。首先用微波電漿化學氣相系統(MPCVD)成長奈米鑽石薄膜，利用不同氧流量進行成長改變薄膜品質，在薄膜成長完成後以Thermal CVD進行不同溫度之退火熱處理，熱處理完成後再以水熱法成長氧化鋅奈米柱於奈米鑽石薄膜上，最後再將複合結構進行二次退火熱處理。
氧流量有清除雜質之功能，可提升品質，由實驗結果可得到氧流量15 sccm品質為較佳，光檢測器分析之亮暗響應度(Switch ratio)為1.15。適當溫度退火可以使雜質以及非晶碳被燒解掉，留下品質更好的鑽石薄膜，實驗結果得知500℃之退火溫度最適當，光檢測器分析之亮暗響應度為1.42。因為鑽石薄膜係由小顆粒組成，可限制氧化鋅奈米柱往橫向成長，而有利於奈米柱垂直成長，因此將氧化鋅奈米柱與奈米鑽石薄膜結合，進行光檢測器量測可獲得比單純氧化鋅奈米柱之亮暗響應度更高，可到達38.9。再將複合結構進行退火熱處理，希望能將氧化鋅奈米柱上的缺陷燒解掉，而得到更佳的品質，由結果可看出退火溫度150℃時可以得到較好的複合結構，其光檢測測器分析之亮暗響應度可到達249.6。

In this study, nanocrystalline diamond films were fabricated with different oxygen flow and then were annealed with temperature of 400℃, 500℃and 600℃ to get different kind of film quality. Then ZnO nanorods were coated on nanodiamond film by the hydrothermal technique. Finally, the bi-layer ZnO nanorod/nanodiamond films were annealed at 150℃and 200℃.
Oxygen can remove impurity and enhance the nanodiamond film quality in the growth process. In this study, oxygen flow of 15 sccm have the best film quality, the photo switch ratio(IPhoto/IDark) is 1.15. It is indicated that impurity and amorphous carbon with appropriate annealing treatment(500℃) possessed the better quality of the nanodiamond film and good IPhoto/IDark of 1.42. It is indicated that bilayer ZnO nanorod/nanodiamond film possessed better IPhoto/IDark(38.9) than those of ZnO nanorods since it might be due to the effect of the nanostructure of the nanodiamond films and/or the interface that could enhance the growth and the quality of ZnO nanorods. It is indicated that the bilayer ZnO nanorod/nanodiamond films got the optimal IPhoto/IDark(249.6) after the annealing treatment of 150℃.

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