此論文之矽光子元件製作及模擬皆採用絕緣層上覆矽 (Silicon-on-insulator, SOI)基板。因其具備高折射率係數之特性，可大幅縮小元件體積，而且製程可與互補式金屬氧化物半導體 (Complementary Metal Oxide Semiconductor, CMOS)製程相互兼容，所以絕緣層上覆矽近年來被廣泛應用於高速低功耗電子元件，未來有利於高密度光電積體電路的發展。
由於傳統光纖模場難以耦合進次微米矽光子元件，此論文將探討兩種不同的光纖耦合元件 - Nanotaper及光柵耦合器。經由商業軟體OmniSim之時域有限差分法 (Finite Difference Time Domain, FDTD)和FIMMWAVE之有限差分法 (Finite Difference Method, FDM)進行交叉數值模擬及模態驗證，可得到Nanotaper耦合器於尖端長寬分別為40 μm與0.12 μm時，其耦合效率可達89% (-0.5dB)，而光柵耦合器單端耦合效率平均約為50% (-3dB)。同時我們更進一步分析Nanotaper模態狀況，將其衍伸應用於表面電漿生醫感測元件上。
元件的製程皆於國家奈米元件實驗室 (National Nano Device Laboratories, NDL)進行，我們將探討分析I-line光學步進曝光機與Leica e-beam-電子束直寫系統製作元件之差異，製程實驗結果在I-line光學步進曝光機波導線寬製程限制約為0.35 μm，電子束直寫系統可穩定曝光0.1 μm寬之波導線寬。
由I-line製作出之光柵耦合器，其單端最低耦合效率約為6%　(-12dB)，導致耦合效率降低的因素為側壁粗糙、覆蓋氧化層之品質亦以及耦合角度，相較於傳統絕熱式之邊緣3 μm波導線寬耦合器，耦合效率明顯提升許多。

In this thesis, silicon-on-insulator (SOI) substrates are designed and simulated to make photonic devices. Because of the high refractive index contrast, the SOI based optical waveguides footprint can be significantly reduced besides widely used in high-speed and low-power electronic components in recent years. Moreover, the silicon photonic process is compatible with a complementary metal oxide semiconductor fabrication, which will benefit to the high-density optoelectronic integrated circuits (OEIC) development.
Due to the coupling difficulty between the traditional fiber mode and sub-micron siliconwire based photonic components, there are two approaches explored in this thesis - Nanotaper and grating coupler. The nanotaper coupling efficiency, 89% (-0.5dB), can be demonstrated at 40-μm tip length and 0.12-μm width using the cross-value simulation and modal verification through the commercial softwares of OmniSim's Finite Difference Time Domain (FDTD) and FIMMWAVE's Finite Difference Method (FDM). The grating coupling efficiency is about 50% (-3dB) on average. Furthermore, the nanotaper mode will be utilized for the surface plasmon biosensing.
All the components are processed in the National Nano Device Laboratories (NDL). The differences between the I-line stepper and the Leica electron-beam lithography will be further discussed. The experimental results show that the electron beam writing system can resolve 0.1-μm waveguide width and 0.35-μm for the I-line stepper exposure.
Finally, the grating coupler is successfully fabricated and the single-ended minimum coupling efficiency is about 6% (-12dB), which may come from the factors of the sidewall roughness, cladding layer quality, and coupling angle. Compared with the conventional 3-μm adiabatic taper coupler, the grating coupling efficiency is significantly improved .

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