本論文旨在針對超高壓功率電晶體實現於晶片內部，以減少外部元件數量。控制晶片應用於升壓型轉換器，操作於連續導通模式(CCM)。藉由脈波寬度調變機制(PWM)來改變開關訊號的責任週期大小以穩定升壓型轉換器的輸出電壓。整個控制電路以及超高壓功率電晶體皆整合於晶片內。
本控制晶片以台積電0.5 μm Ultra HV 2P3M 5V/20V/800V CMOS製程來實現，晶片面積為3.580×2.580 mm2。升壓型電路系統規格如下：輸入電壓範圍從200 V至300 V，輸出電壓為400 V，操作頻率為200 kHz，輸出負載電流變化為100 mA至500 mA。晶片功耗為4.6 mW，轉換效率可達92.5%。本論文成功將超高壓功率電晶體實現於晶片內部，以減少晶片外部元件數量。

The purpose of this thesis is to implement the Ultra-High-Voltage (UHV) Power MOSFETs into a chip to reduce the number of external components. The control IC is designed for boost converters and operates in continuous conduction mode (CCM). The control IC uses the pulse width modulation (PWM) by changing the duty cycle width of the switch signal to regulate the output voltage of the boost converter. The whole control circuit and the UHV Power MOSFETs are integrated into a chip.
The control IC is implemented with TSMC 0.5-μm UHV 2P3M 5V/20V/800V CMOS process, and its size is 3.580×2.580 mm2. The specifications of the boost converter are: the input voltage range is from 200 V to 300V, output voltage is 400 V, the operating frequency is 200 kHz, and the output load current is varied from 100 mA to 500 mA. The chip power consumption is 4.6 mW, and the system conversion efficiency is up to 92.5 percent. The thesis successfully implements the UHV Power MOSFETs into the chip, which reduces the number of external components.

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