本論文研究以成本低廉的工業殺菌、防腐用化學品－苯基苯酚合成多孔活性碳，並藉由B和N的摻雜改變活性碳的孔洞結構來提升比電容值。未摻雜活性碳中，可藉由提升熱裂解溫度及增加含鉀造孔劑的量來提高活性碳的比表面積，並使孔洞變大且變多。對苯基苯酚作為前驅物且熱裂解溫度為900C時，苯基苯酚與鉀之莫耳數比從1:1.5增加到1:20，比表面積從948 m2 g-1增加到2528 m2 g-1；鄰苯基苯酚則從1323 m2 g-1增加到1740 m2 g-1。使用高比表面積之未摻雜活性碳在0.5 M H2SO4(aq)中掃描速率為0.5 mV s-1下測得的比電容值皆可大於200 F g-1，在1 M TEABF4 in ACN中掃描速率為1mV s-1下測得的比電容值也都可大於400 F g-1，且具有良好的循環穩定性。
　　當摻入5%硼酸後得到的摻硼活性碳，不管苯基苯酚與鉀之莫耳數比為1:12還是1:20，都可獲得比未摻雜活性碳大的比表面積，比表面積最大可達2609 m2 g-1，且孔洞也有變大的趨勢。最大比表面積之摻硼活性碳在0.5 M H2SO4(aq)中掃描速率為0.5 mV s-1下測得的比電容值為316.6 F g-1，在1 M TEABF4 in ACN中掃描速率為1mV s-1下測得的比電容值為509.7 F g-1。當硼酸摻雜量提升至10%後，比表面積及孔洞又比5%硼之活性碳提升更多，比表面積最大為2659 m2 g-1。而此摻硼活性碳在0.5 M H2SO4(aq)中掃描速率為0.5 mV s-1下測得的比電容值為344.7 F g-1，在1 M TEABF4 in ACN中掃描速率為1mV s-1下測得的比電容值為521.3 F g-1。不管硼的摻雜量為5%還是10%，都有良好的循環穩定性。
　　摻入N之後，熱裂解溫度為900C所得的摻氮活性碳，比表面積更是高達3000 m2 g-1以上，2 nm以上之中孔含量也明顯提高。而摻氮活性碳在0.5 M H2SO4(aq)中掃描速率為0.5 mV s-1下可得到高達500 F g-1以上的比電容值，在1 M TEABF4 in ACN中掃描速率為1mV s-1下也可獲得550 F g-1以上的比電容值，且循環穩定性也極佳，但產率卻不到20%。
　　最後利用2種不同電解質(TEABF4和TBABF4)及5種不同孔徑分佈之活性碳驗證不同孔洞大小對不同離子大小造成之影響，從不同電解液測得的循環伏安曲線之差異比對孔徑分佈圖，可發現TBA+幾乎不能進入1.5 nm以下之孔洞中。

In this study, a low-cost chemical phenylphenol has been implemented as the precursor of activated carbon for electrochemical capacitor applications. The energy storage capability of this activated carbon is further enhanced by doping of B and N.
In undoped activated carbon, the specific surface area of the activated carbon can be increased by raising the pyrolysis temperature and the amount of the pore-forming potassium agents, and the pore size also become larger and more. The molar ratio of phenylphenol to potassium increased from 1:1.5 to 1:20, specific surface area increased from 948 m2 g-1 to 2528 m2 g-1, when para-phenylphenol is used as a precursor at 900C; specific surface area increased from 1323 m2 g-1 to 1740 m2 g-1, when ortho-phenylphenol is used as a precursor. The specific capacitance can be greater than 200 F g-1, using a high specific surface area undoped activated carbon at scan rate of 0.5 mV s-1 in 0.5 M H2SO4(aq). The specific capacitance exceeds 400 F g-1 at scan rate of 1 mV s-1 in 1 M TEABF4 in ACN. Also it displays good cycle stability.
Boron-doped activated carbon obtained after incorporation of 5% boric acid, regardless of the molar ratio of phenylphenol to potassium is 1:12 or 1:20, both achieve a larger specific surface area than undoped activated carbon, the specific surface area can be up to 2609 m2 g-1, and the pore also tends to increase in size. The specific capacitance of the boron-doped activated carbon is 316.6 F g-1 at scan rate of 0.5 mV s-1 in 0.5 M H2SO4(aq). The specific capacitance is 509.7 F g-1 at a scan rate of 1 mV s-1 in 1 M TEABF4 in ACN. The specific surface area is up to 2659 m2 g-1, when the amount of boric acid is increased to 10%, the specific surface area and pores are more enhanced than 5% boron. The specific capacitance of the boron-doped activated carbon is 344.7 F g-1 at scan rate of 0.5 mV s-1 in 0.5 M H2SO4(aq). The specific capacitance is 521.3 F g-1 at a scan rate of 1 mV s-1 in 1 M TEABF4 in CAN, regardless of whether the doping amount of boron is 5% or 10%, and it shows good cycle stability.
After doping with nitrogen, the activated carbon obtained through pyrolysis at 900C, the specific surface area reaches 3000 m2 g-1 or more, and the amount of mesoporous pores is raised as well. Nitrogen-doped activated carbon is measured with specific capacitance more than 500 F g-1 at scan rate of 0.5 mV s-1 in 0.5 M H2SO4(aq). Specific capacitance more than 550 F g-1 can be obtained at a scan rate of 1 mV s-1 in 1 M TEABF4 in ACN, and the cycle stability is also excellent, but the yield is less than 20%.
Finally, two different electrolytes (TEABF4 and TBABF4) and five different pore size distributions of activated carbon were used to study the connections between different pore sizes on different ion sizes. We also find TBA+ hardly enter pores which the size is smaller than 1.5 nm, when comparing the difference in cyclic voltammetry curves measured from different electrolytes and the pore size distribution pattern.

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