本研究以水相微波輔助合成法，一步合成CuInSe2(CISe)三元量子點，在合成過程中藉由四種具有巰基與羧基的雙功能分子作為包覆劑，並探討對CISe量子點的合成差異性，尤其以半胱胺酸(L-cysteine)包覆的CISe量子點，在光學性質的量測中，擁有較廣的吸光範圍與更低的缺陷密度，後續應用至太陽能電池，此條件擁有四者中最高的光電轉換效率，其值高達9.06%。
隨後為了更進一步提升量子點敏化劑之效能，本研究以半胱胺酸包覆的CISe量子點為基礎，依序以CuInS2(CIS)量子點共敏化與釓離子(Gd3+)表面處理等兩種方式對敏化劑結構進行額外改良。在共敏化的方式中，CIS量子點加入後與CISe量子點相異的結構在吸收光譜產生互補性，增加對入射光的利用，且透過共敏化後在光陽極內部形成的梯狀能隙結構，提升電子注入的驅動力；而釓離子表面處理方面，則利用其獨特的4f7價層軌域，加速激發電子的傳遞速率，且陽離子披覆在量子點表面上不僅能鈍化晶格缺陷，還能藉由靜電力提升以增加量子點共敏化的負載量；經由CIS量子點共敏化與釓離子表面處理後，太陽能電池元件的短路電流密度(JSC)從26.0 mA·cm-2上升至31.4 mA·cm-2，光電轉換效率高達10.97%。

In the present study, we have developed low-cost and solution-processed ternary CuInSe2 (CISe) quantum dots (QDs) using a one-step microwave-assisted pyrolysis approach. For this, mixtures of various bifunctional molecules with thiol and carboxyl groups were used as capping agents, and their effects on the optical, structural, and efficacy in quantum dot-sensitized solar cells (QDSSCs) have been thoroughly investigated. Accordingly, the optical performance of CISe QD-coated with L-cysteine demonstrated a wider light absorption band and lower defect density. Benefitting from its superior light-harvesting ability and better electrocatalytic properties, the L-cysteine coated CISe QD demonstrated the highest power conversion efficiency (PCE), with a value reaching up to 9.06 %, in QDSSCs.
Moreover, in order to enhance the efficacy of QDSSC, we developed two different surface modification strategies for the sensitizer molecule, followed by co-sensitization of CuInS2 (CIS) QD and surface treatment by gadolinium ion (Gd3+). In the co-sensitization method, the structural differences between CIS QDs and CISe QDs result in complementary optoelectronic properties that improve the utilization of incident light. Furthermore, a better cascade energy structure that formed inside the photoanode increased the driving force of electron injection. The coating of cations on the surface of QDs brought not only passivates the lattice defects but also strengthens the electrostatic force, leading to increased QD co-sensitization loading. Whereas, the unique transitions of 4f7 valence orbital may speed up the transfer rate of excited electrons in the case of surface treatment by Gd3+. As a result, the QDSSCs with surfaces modified CISe QDs boosted the short-circuit current density (JSC) from 26.0 mA·cm-2 to 31.4 mA·cm-2, thus resulting in a high PCE of 10.97%.

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