利用銅箔以化學氣相沉積的方法成長石墨烯，利用濕式轉移方式將石墨烯轉移至平面矽基板、金字塔結構矽基板以及矽奈米線基板上。在平面矽基板上轉移不同層數石墨烯場發射。量測不同層數石墨烯的功函數。石墨烯的邊緣及缺陷會增強其場發射特性。因為金字塔結構具有疏水性且形貌高低特性會產生邊緣及缺陷，於是轉移至金字塔結構矽基板，探討轉移不同層數於此會有不同性質和場發射特性。但金字塔結構具有斜面，會造成電子間的干擾，於是將不同層之石墨烯轉移在矽奈米線基板上，奈米線尖端與尖端間具有縫隙，於是會使石墨烯產生邊緣與缺陷，本論文發現三層石墨烯在矽奈米線上之場發射為最佳(起始電場為3.02 V/μm)，於是取其樣品進行後處理以增進場發射特性。
本論文以氫電漿進行後處理，探討不同功率對三層石墨烯/矽奈米線之影響，使用800W、900W及1000W氫電漿轟擊石墨烯，結果以900W具有良好的場發射特性(起始電場為2.22 V/μm)。
並探討石墨烯於不同基板其場發射穩定性。石墨烯由於是浮貼於矽奈米線上，場發射穩定性最差，石墨烯在平面矽基板及金字塔結構矽基板比較，後者的穩定為最佳，其原因為在金字塔結構上具有較多的有效電子發射點，所以會比在平面矽基板的場發射穩定性。

Graphene (G) layer was synthesized on the Cu foils by the thermal chemical vapor deposition technique (T-CVD). It stacks onto the different silicon templates (planar silicon wafer, pyramid substrate, and silicon nanowires) to form the bilayer structure for field emission cathodes. The surface coverage, edges, and defects of the bilayer structure are increased as the graphene layer increase. On the other hand, the work functions are decreased with more graphene layers. Moreover, these are beneficial for the field emission properties.
The G layer was formed on the SiNW template due to the voids of the SiNW surface to produce the more edges. The surface morphology of the 3-layer G/ SiNW shows the higher surface coverage than other G layers on SiNW templates. It is found that the FE properties of 3-layers G/SiNW cathodes possess a lower turn-on electric field and higher current density. Nevertheless, the 3-layers G/pyramid field emission cathode shows the longer stability than 3-layers G/SiNW cathodes, since the G on the SiNW were burned easily for field emission measurement.

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