本論文主要描述除二注入鎖定除頻器，其分別為“三頻帶六階共振腔除二除頻器”、“除二除頻器之熱載子研究”。所有電路皆採用台積電所提供之點一八微米互補式金氧半製程所製造。
三頻帶除二除頻器運用可變電容上的電壓切換頻帶，在每個頻帶中都能實現除二除頻，因此三個頻帶所有的除頻範圍遠比單一頻帶除頻器大，在電源1V注入功率大小為0dBm的訊號時高頻除頻鎖定範圍為1.6GHz(14.95%)；中頻除頻鎖定範圍為3.1GHz(42.17%)；低頻除頻鎖定範圍為1.8GHz(40%)。
對於熱載子研究以往應用在一般除二除頻器，一般的除二除頻器電路有直流與交流成分，而此研究加入開關在一般除二除頻器上，純粹探討直流對除二除頻器所造成之效應。

A triple-band divide-by-2 LC injection-locked frequency divider (ILFD) was implemented in the TSMC 0.18 μm 1P6M CMOS process. The divide-by-2 ILFD uses a cross-coupled nMOS pair and a 6th order LC resonator. At the drain-source bias of 1 V and the incident power of 0 dBm the high-band, middle-band and low-band locking range of the divide-by-2 ILFD are 1.6GHz (40％) from 9.9 to 11.5 GHz, 3.1GHz (42.17％) from 5.8 to 8.9 GHz and 1.8GHz (14.95％) from 3.6 to 5.4 GHz respectively .The core power consumption is 21.54 mW. The die area is 1.198×1.155 mm2

A divide-by-2 injection-locked frequency divider (ILFD) is designed for hot-carrier stress experimental study. The ILFD is made of a capacitive cross-coupled voltage-controlled oscillator and capacitive direct-injection MOSFET composite that consist of two MIM capacitors in series with injection MOSFETs. The cross-coupled transistors are respectively dc-stressed, and degraded drain current is found. The degradation due to dc current in locking range of the ILFD was found, This degradation is contributed by MERELY the cross-coupled MOSFETs.

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