本研究中，使用流化床反應器設備來製備出WS2無機奈米管。利用化學氣相沉積法來合成WS2奈米管會受到很多因素影響，包含了不同的H2S流速、不同的反應溫度，以及添加石英載台來改善反應爐內部流場，使氣流在反應區域內方向一致、並增加反應區內流速，進而提高驅動力以利於奈米管的合成，並利用TEM進行WS2奈米管的分析。
利用微影製程製作出場效電晶體元件，使用WS2奈米管作為電晶體之通道且藉由光學顯微鏡進行圖形檢測，WS2奈米管場效電晶體元件展現出p-type的半導體特性，藉由快速熱退火處理，WS2奈米管場效電晶體元件的電性特性顯著提升。

This study used the fluidized bed reactor to prepare WS2 inorganic nanotube. Synthesize WS2 nanotubes with chemical vapor deposition method to may affect by many factors, including different H2S flow rate, different reaction temperature, and the use of quartz holder to improve the reactor flow field. The air flow in the same direction within the reaction zone, increasing the flow rate in reaction zone, then improve the driving force to facilitate the synthesis of nanotubes, and use TEM to analysis WS2 nanotubes.
This study used lithography method to produce the field effect transistor device, placing the nanotubes onto the transistor channel and check its pattern by optical microscope. WS2 nanotube field effect transistor device shows p-type semiconductor property. Through the rapid thermal annealing treatment, WS2 nanotube field effect transistor device shows significant increase in electrical characteristic.

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