本篇論文主要探討如何利用光登伯效應 (Photo-Dember Effect) 製作一種自供電與非致冷的紅外光登伯偵測器，。我們發現可以通過利用電子電洞極大的遷移率差異，在半導體與電極邊界處產生電洞聚集電子會先進入電極，電洞留在邊界，並設計不對稱電極元件造成，使兩邊正電荷差異，由此特殊的光電場來達成而形成電場來優化光登伯光偵測器的目的。材料上我們選擇InSb與GaAs。InSb方面，藉由此效應，我們製作InSb光登伯光偵測器，在InSb中因其電子電洞遷移率差異達到約100倍，且因爲其能隙只有0.17 eV，會是非常優秀的非製冷、自供電、中遠紅外偵測器。經過量測，其在零外加偏壓且均勻光照的條件下，可表現出極佳的光電流響應，從可見光到紅外光波長範圍（532~1550 nm）皆有明顯的光響應。隨著雷射強度增加，光電流呈現線性的上升趨勢。在波長1064 nm的紅外光均勻照射下可量到最佳的光響應率 (Photoresponsivity) 與偵測率 (Detectivity) ，并發現在製程中選用不同遮罩的差異。此外，爲了進一步探討光登伯效應的物理機制，我們將材料更換爲GaAs，高時間解析光電導量測也顯示其光響應時間最快可達到 265 μs。利用掃描式光電流顯微術,在局部照光條件下可進一步證實 GaAs確實存在由光登伯效應產生的光電流，光登伯效應造成的光電流只在非常靠近元件電極處產生，並且在低溫環境下具有更高的光電流及更低的反應時間。

This thesis investigates how to design and fabricate a self-powered and uncooled infrared (IR) photodetector based on the photo-Dember effect. The Dember photodetectors driven by the hole accumulation at the edge of metal electrodes and induced photovoltage were achieved by fabricating geometrically asymmetric electrodes and utilizing the nature of great electron to hole mobility ratio (EHMR) in semiconductors. Indium antimonide (InSb) and gallium arsenide (GaAs) which possess photo-Dember effect were selected to be the absorber semiconductor materials. InSb with the EHMR near 100 and very low bandgap at 0.17 eV is a good candidate for middle and far IR Dember photodetectors. Our result shows the InSb Dember detectors at room temperature and without bias exhibit substantial photoresponse at a broad wavelength range (532~1550 nm) . The photocurrent shows a linear increase with the increase of laser intensity. The optimal photoresponsivity and detectivity were obtained under 1064 nm wavelength IR light. In addition, GaAs Dember detectors were also studied. Time-resolution photoconductivity (TRPC) measurements also indicate the photoresponse time of GaAs detector at 265 μs. Scanning photocurrent microscopy (SPCM) measurements have further confirmed that the substantial photoresponse of GaAs detectors is dominated by the Photo-Dember Effect. Temperature-dependent TRPC measurements show the Dember photocurrent was enhanced and response time was speeded up at low temperature.

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