半導體技術的演進，除了改善性能如速度、能量的消耗與可靠性外，
另一重點就是降低製作成本。而MQL已確實可以廣泛的應用在車、銑、鑽、磨、鋸等各式切削上，且使用MQL切削可發揮良好的潤滑效果，然而在固定磨料線鋸切割矽晶碇之MQL的作用，則尚未有人做進一步之探討，故本研究利用實驗室所開發之小型複線式線鋸機，將鑽石線鋸製程更改潤滑條件，分為切削液、切削液噴霧Minimum Quantity Lubrication(MQL)、乾切削共三種，針對不同進給率和潤滑方式之組合進行切削實驗，探討不同潤滑條件下鑽石線與矽晶片之磨耗行為，藉由MQL理論以改進鑽石線鋸製程並比較不同潤滑條件對鑽石線及矽晶片之磨潤效果，並於實驗後以掃描式電子顯微鏡(SEM)、光學顯微鏡(OM)觀察實驗結果，紀錄及計算鑽石線切割之切削力、鑽石顆粒磨耗、矽晶片表面形貌及表面粗糙度等資料。評估上述三種潤滑條件之優劣，結果顯示在表面粗糙度及表面形貌方面MQL確實可以達到與濕切削相同的程度，甚至於更好一些；而鑽石顆粒磨耗也因為MQL細小噴霧粒子能有效進入到切削區域，使鑽石顆粒相較於其他潤滑方式能有更好之耐磨耗，以延長鑽石線之壽命；切削力方面的表現，MQL也證明了微量潤滑噴霧可以有效的減少摩擦，達到潤滑之效果並且降低切削力，使得切削狀況更加穩定，而切削液噴霧用量相較於傳統之切削液使用方式又來的小，可達到節省成本及環境保護的目的。

In semiconductor technology, except time and energy reduction, cost reduction is also an important issue. Minimum quantity lubrication was applied on turning, milling, drilling and others machining processes commonly. There are positive lubrication effects in machining using MQL. However, the silicon wafer slicing by wire sawing using MQL has not been be studied. Therefore, this study focuses on comparing the results of wire wear and machining properties of silicon wafer with three different lubrication conditions i.e. traditional coolant, minimum quantity lubrication and dry cutting. The experimental results and discussion are based on surface roughness, morphology, bow angle, wire wear and cutting force when using the different lubrication conditions mentioned above. The final results showed that the lubricating effect of MQL is better and more effective as compared to traditional coolant and dry cutting during silicon wafer slicing process.

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