本研究利用原子轉移自由基聚合法（atom transfer radical polymerization，ATRP），在矽晶片上接枝聚合聚甲基丙烯酸乙酯poly（2-Hydroxyethyl methacrylate，PHEMA）高分子刷；首先利用電子束微影（electron-beam lithography），於矽晶圓表面製造出光阻圖案，接著進行氧電漿處理，使無光阻區之矽表面產生氫氧基，然後利用此氫氧基，於表面進行起始劑自組裝反應，使矽晶片表面自組裝11-(2-Bromo-2-methyl)propionyloxyundecenyltrichlorosilane單層膜，此為原子轉移自由基聚合反應的起始劑，接著加入氯化亞銅、溴化銅、2,2’-Bypyridine以及甲基丙烯酸乙酯，分別做為金屬觸媒、螯合劑、接枝單體，進行原子轉移自由基聚合。
使用化學分析電子光譜儀（electron spectroscopy for chemical analysis，ESCA），分析起始劑自組裝單分子層與PHEMA高分子刷之表面元素；使用橢圓測厚儀（Ellipisometer）量測PHEMA高分子刷之厚度，反應24小時之PHEMA高分子刷的厚度約為424 nm；使用原子力顯微鏡（atomic force microscopy，AFM）與掃描式電子顯微鏡（scanning electron microscope，SEM），分析圖案化PHEMA高分子刷與鐵蛋白分布。結果顯示，本研究建立了能於矽表面製備PHEMA高分子刷之製程並且成功的定位鐵蛋白於分子刷上。

The patterned poly (2-Hydroxyethyl methacrylate) (PHEMA) polymer brushes were grafted on the silicon surface by using atom transfer radical polymerization (ATRP) method. The silicon wafer surface patterned by electron beam lithography was treated oxygen plasma to increase the hydroxyl groups, then the samples were immersed into the 11-(2-Bromo-2-methyl)propionyloxyundecenyltrichlorosilane as the initiator of self-assembled monolayer to modify the surface through the hydroxyl group on the silicon wafer. The PHEMA brushes on the silicon wafer surface were grafted by using 2,2’-Bypyridine、 CuCl、CuBr2 and 2-Hydroxyethyl methacrylate (HEMA) as the ligand, catalytic and monomer for ATRP, respectively. The Electron Spectroscopy for Chemical Analysis (ESCA) was utilized to analyze the surface element of SAMs of initiator and PHEMA polymer brushes. The thickness of PHEMA brushes polymerized after 24 hours was about 424 nm measured by ellipisometer. The morphology of patterned SAMs and PHEMA brushes were investigated by atomic force microscopy (AFM) and scanning electron microscopy (SEM). Therefore, the fabricated process of patterned PHEMA brushes on the silicon surface was established and the ferritin was successfully adhered to the pattered polymer brushes in this work.

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