本論文係使用CMOS(Complementary metal-oxide-semiconductor)及GIPD (glass integrated passive device)製程研製毫米波寬頻平衡-不平衡轉換器，主要採用兩耦合器組成之馬群平衡-不平衡轉換器電路架構實現。當兩耦合器間之連接線非零長度時，將影響平衡-不平衡轉換器之操作頻率及頻寬。本論文將使用S參數推導兩耦合器間加入連接線後的平衡-不平衡轉換器設計公式。此外，該公式將一併考慮使用高耦合量耦合器實現平衡-不平衡轉換器之情況。本論文所設計之平衡-不平衡轉換器使用國家晶片中心所提供的TSMC CMOS 0.18 μm與TMT GIPD製程製作，並完成晶片量測。由模擬與量測吻合之結果得知，使用高耦合量之耦合器研製之平衡-不平衡轉換器可獲致縮小電路且寬頻之效果。

The aim of this thesis is to use the CMOS (Complementary metal-oxide-semiconductor) and GIPD (glass integrated passive device) processes for the millimeter-wave broadband balun development. The Marchand balun architecture realized by two quadrature couplers is adopted in this thesis As the connecting line between two couplers is non-zero, it will lead to the significant frequency shift and
bandwidth degradation.
In this thesis, the S-parameters will be employed to derive the design formulas of the balun with considering the effect of the connecting line. In addition, the formulas will be considering the case of using the high coupling-coefficient couplers to implement the balun. The developed baluns are fabricated by the TSMC 0.18 μm CMOS and GIPD processes provided by the CIC and completely measured. The results demonstrate that using the high coupling-coefficient couplers to develop a balun can effectively reduce circuit size and broadband enhance the bandwidth.

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