本論文使用低溫水溶液合成法，合成氧化鋅奈米柱(Znic Oxide NanoRod)，以攝氏88度的水溫進行合成，並將其合成在三種不同型態的矽基板上，分別是二氧化矽(Silicon Dioxide)絕緣基板、P-型平面矽(P-Type_Silicon Plane)導電基板以及3D表面的矽金字塔導電基板(P-Type _Silicon Pyramid)，進行氨氣感測(Ammonia Gas Sensor)的實驗，本實驗有幾項探討，分別為 (1) 不同時間的氧化鋅成長時間對於氨氣感測的影響， (2) 氧化鋅奈米柱成長於絕緣基板與導電基板對於氨氣感測的影響，以及 (3) 氧化鋅奈米柱成長於2D平面基板以及3D立體結構的導電基板對於氨氣感測影響並對其進行表面分析、成分含量分析、結晶度分析，並觀察其相互之間之關係。
在研究中，我們發現氧化鋅奈米柱成長於不同型態的矽基材時，他們有不同大小的外觀型態及結晶狀況，並且我們也發現，當氧化鋅奈米柱成長於二氧化矽基板時，其成長狀況，會依據成長時間增加而變得更加高大，並在結晶及成分多寡分析時，結晶狀況也會越來越好，成分也越來越多，因此在氨氣感測時，我們發現成長時間最長的參數，具備有最好的氨氣感測數值，接下來，當我們將氧化鋅奈米柱成長於P型平面矽基板時，發現其柱狀高度，明顯降低，因此我們判斷平面矽基板相對於二氧化矽基板而言，有較不易生長氧化鋅奈米柱的狀況，然而在結晶度及成分含量多寡的分析時，我們也發現其結晶狀況及成分含量，有明顯下降的情形，因此我們更加確信，平面矽基板確實有不易成長氧化鋅奈米柱的狀況，然而當我們進行氨氣感測時，其氣感響應，卻不是依據結晶及成分多寡進行響應回復，因此我們判斷其最有可能依據異質接面所帶來的響應影響。再來我將氧化鋅奈米柱成長於金字塔表面矽基板時，其成分及結晶分析狀況，又更為下降，因此在三種矽基材基板中，氧化鋅奈米柱又更不易成長於金字塔矽基板，但在氨氣感測時，其響應回復卻是三種基板中最高的，我們判斷其響應回復源自於，異質接面及放射狀生長的氧化鋅奈米柱。

For this research, Zinc Oxide NanoRod is major gas sensing material, we fabricate it on three type silicon substrate by solution process, because it is low price and more friendly for environment, then we divide the research into three part, the first part, we fabricate zinc oxide nanorod on silicon dioxide substrate, in fact, the fabrication model that is pure ZNR type, then we will discuss what gas sensing principle in this model is. so we use XRD and Raman technology to analyze material amount and crystalline property, then we can realize what is relationship between material quality and ability of sensor. In second part, we grow ZNR on p-type silicon substrate, we find out some interesting information in SEM analysis, when ZNR be grew on silicon substrate，the rod length of ZNR/Si is more shorter than it be grew on SiO2 substrate, maybe SiO2 is more suitable to fabricate ZNR, in order to confirm the special situation, we use XRD and Raman to analyze material quality of ZNR/Si, then ZNR/Si posses more lower crystalline, that just a phenomenon, then we want to know that causing reason, so ZnO seed layer surveying is importance, but we can’t get any helpful information in ZnO seed layer analysis, then we use ZNR/Si to sense NH3, its performance is high than ZNR/SiO2, we estimate that heterojunction contribute sensing effect. the third part, we fabricate ZNR on pyramid silicon wafer, then ZNR possess radiate shape on pyramid substrate, so it can sense more gas content by radiate shape, then it possess the highest performance in this research.

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