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研究生: 陳旭明
Chen - Shu Ming
論文名稱: 薄膜製程對整合型濾波器品質影響之探討
A Study on Effect of thin film technology on the Quality of Integrated Filter
指導教授: 吳翼貽
Ye-Ee Wu
口試委員: 廖崑亮
none
蔡顯榮
Hsien-Lung Tsai  
學位類別: 碩士
Master
系所名稱: 工程學院 - 材料科學與工程系
Department of Materials Science and Engineering
論文出版年: 2009
畢業學年度: 97
語文別: 中文
論文頁數: 50
中文關鍵詞: 薄膜製程整合型濾波器介入損耗
外文關鍵詞: investigate, Insertion Loss, etching time
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  • 本論文係探討薄膜製程對整合型濾波器品質的影響,探討標的物為以薄膜技術將電容、電感及電阻整合成為運用在消費性電子產品中之濾波器元件。此標的物係以市場上廣泛使用之2012型BPF(2.4GHz BPF for Wireless LAN & Bluetooth)為目標,並利用便宜且經表面奈米處理的96%氧化鋁基板作為堅強的底材(因氧化鋁可提供極佳的機械、熱、電絕緣性質)。
    利用網路分析儀以晶圓級量測方式,先求得滿足介電係數8.8需求之AlN介電層厚度。再以此介電層厚度為基礎,以不同的蝕刻參數製作電鍍層,再利用網路分析儀進行高頻電路之S參數(S21)量測分析,並針對此設計的特性1.8GHz及2.45GHz頻段作分析,確認實作之濾波器的介入損耗特性。最後使用SEM分析觀察薄膜製程中,電感層(銅電鍍層)對濾波器的品質影響。
    研究結果顯示AlN介電層厚度為1.1um時,其介電係數可達8.8的設計需求值,且銅電鍍層蝕刻時間為5秒時其介入損耗為-3.47dB亦近於原設計之-3.0dB的要求。SEM觀察顯示,在10秒及15秒蝕刻時間所得的銅電鍍層均含有底切(under cut)的現象,故其在2.45GHz頻段之介入損耗值分別升高為-4.29dB及-5.01dB。顯示在銅電鍍層產生底切現象會增加濾波器的介入損耗,並影響濾波器的品質,故應嚴格控制薄膜製程蝕刻參數,方可確保濾波器的品質。


    The objective of this study is to investigate the influence of etching process parameter on the quality of a proto-type filter (2012 type BPF) utilized in 2.4GHz wireless LAN & Bluetooth devices. Thin film technology was applied to fabricate this designed filter, which integrated capacitor, inductor and resistor onto a proprietary Al2O3 foundation. On-wafer Network Analyzer was used to measure the dielectric constant of the Al2O3 foundation and the Insertion Loss(S21 component) of this designed filter at high frequency. Then, SEM was applied to examine the cross-sectional area of the tested specimen to study the influence of etching process parameter on the insertion loss of this designed filter.
    Experimental results showed that the dielectric constant of a 1.1um thick Al2O3 foundation could fulfill the design requirement of 8.8. Based on the experimental data, a linear relationship between the dielectric constant value and the thickness of Al2O3 foundation was established with a correlation of 0.97 in the range of 0.95um~1.15um. The best etching time for the Cu layer was 5 second, and resulted in a insertion loss of -3.47dB, which is closed to the designed value of -3.0dB. Longer etching time will resulted in higher insertion loss, -4.29dB and -5.01dB, of the filter.
    SEM observations revealed that under-cuts were occurred at the Cu layer for etching time longer than 5 second, the severity of the under-cut was increased with increasing etching time. To have a good quality control on manufacturing this designed filter, the etching process parameters should be under tight control.

    目 錄 指導教授推薦書…………………………………………………...II 學位考試委員會審定書…………………………………………..III 論文摘要.............................................IV ABSTRACT……………………………………………………………V 誌 謝 ………………………………………………………VI 目 錄…………………………………………………………VII 表目錄…………………………………………………………… X 圖目錄…………………………………………………………… XI 第一章 前言………………………………………………………..1 1.1研究背景與動機 ………...………………………………1 1.2研究目的………………………………………………… 4 1.3論文章節介紹…………………………………………… 4 第二章 文獻探討……………………………………………………5 2.1整合型被動元件之製程介紹……………………………… 5 2.1.1整合型被動元件技術…………………………………. 5 2.1.2整合型被動元件之應用.……………………………….7 2.2濾波器設計與基礎介紹……………………………………9 2.2.1基本濾波器設計…………………………………………9 2.2.2低通濾波器…………………………………………… 11 2.2.3高通濾波器…………………………………………… 12 2.2.4帶通濾波器………………………………………… 12 2.2.5帶拒濾波器………………………………………… 13 2.2.6濾波電路的結構與特性參數……………………… 13 2.3整合型濾波器之薄膜製程介紹……………………… 16 2.3.1基板材料之選擇…………………………………… 16 2.3.2本研究各膜層、使用材料、及各膜層相關功能… 17 2.3.3電阻層製程………………………………………… 18 2.3.4金屬層製程………………………………………… 19 2.3.5電鍍層製程………………………………………… 19 2.3.6介電層製程………………………………………… 20 2.3.7隔絕層……………………………………………… 21 2.3.8電容控制……………………………………………22 2.3.9蝕刻(Etching)……………………………………23 2.3.9.1濕蝕刻(Wet etching)…………………………… 23 2.3.9.2乾蝕刻(Dry Etching)……………………………24 2.4高頻元件之量測…………………………………………25 2.4.1量測方法…………………………………………… 25 2.4.1.1測試夾具法……………………………………… 25 2.4.1.2晶圓級量測法…………………………………… 26 2.4.2散射參數(Scattering Parameter)的量測………………27 第三章 實驗步驟…………………………………………………30 3.1整合型濾波器實驗流程…………………………………31 3.2驗證介電材料之參數 (設計為8.8).………………… 32 3.3電鍍層蝕刻參數組合…………………………………. 34 第四章 結果與討論………………………………………………37 4.1介電係數(κ值)的量測……………………………….. 37 4.2S係數的量測.…………………………………………..40 4.3SEM顯微觀察.…………………………………………..44 4.4微觀結構對濾波器品質的影響.……………………….46 第五章 結論………………………………………………………48 參考文獻…………………………………………………………. 49

    參考文獻
    [1] Chi Min Youe,”Integrated passive component property”,Taiwan international securities group,2006
    [2] James f.Shackelford “Materials science for engineers”,University of California,Prentice Hall International,Inc.USA(2000)
    [3] Ying Min Chi,”Thin film Integrated passive component”,Taiwan international securities group,2008
    [4] ACX Corp. 16 Tzu Chiang Road, Hsinchu Industrial District, Hsinchu Hsien, Taiwan,website,2002
    [5] Liu Shin win ,Chi jin gin”A novel compact size 2.4GHz coplanar waveguide Band pass filter with harmonic suppression “,Feng Chia University.Taichung,Taiwan(2005)
    [6] Jiun-Jang Yu”A Study on the Compact, Low Loss of Comb-Line Filter with Three-Transmission Zeros by Using LTCC Technology”National Cheng Kung University, Taiwan,2006
    [7] ETEK TECHNOLOGY CO., LTD writings,” Electric correspond Technology and practice”OpenTech Internet Bookstore. Taipei(2008)
    [8] Pai Chun Hai translate” high frequency circuit design application

    technology”,Jian Hsin Publishing Inc. Taipei(2001)

    [9] Pai Chun Hai translate” correspond principle and application”,Jian

    Hsin Publishing Inc. Taipei(2003)
    [10] 徐文泰,盧榮宏,廖聖茹,張懷祿,洪松慰,黃瑞呈「一種表面平坦化之陶瓷基板」中華民國發明專利, I262907 (2006)
    [11] Nan Chun Chen,”Design of RF key components in multilyer structures”,National Chiao Tung University, Hsinchu,Taiwan (2001)
    [12] Michael Quirk,Julian Serda”Semiconductor manufacturing technology”Pearson Education International ISBN 0-13-122937 pp.435~474(2001)
    [13] 莊達人,「VLSI製造技術」,高立圖書有限公司,台北,第263頁~299頁(2001)
    [14] R.Boylestad ,L.Nashelsky Hui Chi Shin translate”Electronic devices and circuit theory” Centralbook Inc.Taipei(1983)
    [15] 蘇嘉禕、黃國威「高頻元件量測技術」國家奈米元件實驗室 奈米通訊,第七卷第三期(2003)
    [16] 市川裕一、青木勝 著,卓聖鵬 譯「高頻電路設計」,全華圖書股份有限公司,台北(2008)
    [17] Cho Shin Pon”RF and microwave measure”,OpenTech Internet Bookstore. Taipei pp.3~33 (2001)
    [18] Yuigin Cheng , Luke Cheng, Csm Cehn”RF device with ceramic substrate investigation”APM Group. Hsinchu,Taiwan(2008)

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