研究生: |
陳旭明 Chen - Shu Ming |
---|---|
論文名稱: |
薄膜製程對整合型濾波器品質影響之探討 A Study on Effect of thin film technology on the Quality of Integrated Filter |
指導教授: |
吳翼貽
Ye-Ee Wu |
口試委員: |
廖崑亮
none 蔡顯榮 Hsien-Lung Tsai |
學位類別: |
碩士 Master |
系所名稱: |
工程學院 - 材料科學與工程系 Department of Materials Science and Engineering |
論文出版年: | 2009 |
畢業學年度: | 97 |
語文別: | 中文 |
論文頁數: | 50 |
中文關鍵詞: | 薄膜製程 、整合型濾波器 、介入損耗 |
外文關鍵詞: | investigate, Insertion Loss, etching time |
相關次數: | 點閱:226 下載:0 |
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本論文係探討薄膜製程對整合型濾波器品質的影響,探討標的物為以薄膜技術將電容、電感及電阻整合成為運用在消費性電子產品中之濾波器元件。此標的物係以市場上廣泛使用之2012型BPF(2.4GHz BPF for Wireless LAN & Bluetooth)為目標,並利用便宜且經表面奈米處理的96%氧化鋁基板作為堅強的底材(因氧化鋁可提供極佳的機械、熱、電絕緣性質)。
利用網路分析儀以晶圓級量測方式,先求得滿足介電係數8.8需求之AlN介電層厚度。再以此介電層厚度為基礎,以不同的蝕刻參數製作電鍍層,再利用網路分析儀進行高頻電路之S參數(S21)量測分析,並針對此設計的特性1.8GHz及2.45GHz頻段作分析,確認實作之濾波器的介入損耗特性。最後使用SEM分析觀察薄膜製程中,電感層(銅電鍍層)對濾波器的品質影響。
研究結果顯示AlN介電層厚度為1.1um時,其介電係數可達8.8的設計需求值,且銅電鍍層蝕刻時間為5秒時其介入損耗為-3.47dB亦近於原設計之-3.0dB的要求。SEM觀察顯示,在10秒及15秒蝕刻時間所得的銅電鍍層均含有底切(under cut)的現象,故其在2.45GHz頻段之介入損耗值分別升高為-4.29dB及-5.01dB。顯示在銅電鍍層產生底切現象會增加濾波器的介入損耗,並影響濾波器的品質,故應嚴格控制薄膜製程蝕刻參數,方可確保濾波器的品質。
The objective of this study is to investigate the influence of etching process parameter on the quality of a proto-type filter (2012 type BPF) utilized in 2.4GHz wireless LAN & Bluetooth devices. Thin film technology was applied to fabricate this designed filter, which integrated capacitor, inductor and resistor onto a proprietary Al2O3 foundation. On-wafer Network Analyzer was used to measure the dielectric constant of the Al2O3 foundation and the Insertion Loss(S21 component) of this designed filter at high frequency. Then, SEM was applied to examine the cross-sectional area of the tested specimen to study the influence of etching process parameter on the insertion loss of this designed filter.
Experimental results showed that the dielectric constant of a 1.1um thick Al2O3 foundation could fulfill the design requirement of 8.8. Based on the experimental data, a linear relationship between the dielectric constant value and the thickness of Al2O3 foundation was established with a correlation of 0.97 in the range of 0.95um~1.15um. The best etching time for the Cu layer was 5 second, and resulted in a insertion loss of -3.47dB, which is closed to the designed value of -3.0dB. Longer etching time will resulted in higher insertion loss, -4.29dB and -5.01dB, of the filter.
SEM observations revealed that under-cuts were occurred at the Cu layer for etching time longer than 5 second, the severity of the under-cut was increased with increasing etching time. To have a good quality control on manufacturing this designed filter, the etching process parameters should be under tight control.
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