本研究探討了超奈米鑽石和氧化鎵薄膜等寬能隙材料複合於碳布上作為超級電容器之應用，並探討退火之後處理對此結構之影響。內文將分為兩個部分，第一部分致力於提升超奈米鑽石複合於碳布纖維上之均勻性與密度，並探討不同基板前處理和退火後處理對超奈米鑽石複合碳布結構之影響；第二部分旨在探討被視作第四代半導體材料之氧化鎵複合超奈米鑽石作為超級電容器之特性，並探討不同退火後處理對此兩種新型複合結構：Type I: N-UNCD / Ga2O3 / CC、Type II: Ga2O3 / N-UNCD / CC之影響。

研究發現，使用微波電漿輔助化學氣相沉積系統對碳布基板進行氫電漿之前處理，可以有效提升超奈米鑽石複合於碳布纖維上之均勻性，亦提升其作為超級電容器之重量比電容值――推測是因為經氫電漿前處理之碳布在微觀尺度下表面變得粗糙、親水性得到提升，故鑽石粉 (晶種) 於Seeding步驟時與碳布纖維之附著度和均勻度皆明顯提升，因此主製程階段時具有足量均勻分布之成核點誘發超奈米鑽石之均勻沉積。

此外，研究亦發現Type II: Ga2O3 / N-UNCD / CC複合結構在經過600℃大氣退火之後處理其重量比電容值會大幅增加――搭配FE-SEM、Raman和XRD之分析，可推測是因鍍於超奈米鑽石表面上之氧化鎵薄膜在退火過程中保護下層之EDLC結構 (N-UNCD / CC-H2) 不被退火之高溫破壞，同時其自身亦形成結晶性更佳之β-Ga2O3薄膜，致使兩種材料以碳-氧雙鍵 (C=O) 鍵結而成的同時，亦和碳布基板更好的複合，最終在EDLC和PC (Pseudocapacitor) 之協同作用下顯著提升了其電容值；最後，其重量比電容值在經過3000次循環充放電後提升為初始值的133.7%，表明此種Ga2O3 / ND / CC-H2新型複合結構具有優異之循環穩定性。

In this study, we combine two wide band gap materials: ultra-nanocrystalline diamond (UNCD) and gallium oxide (Ga2O3) films on carbon cloth, forming two types of novel composite structures: (i) N-UNCD / Ga2O3 / CC and (ii) Ga2O3 / N-UNCD / CC for supercapacitors. Studies have shown that applying hydrogen plasma pre-treatment on carbon cloth before seeding process can effectively improve the uniformity of N-UNCD on the carbon cloth substrate, leading to the increase of its specific capacitance value (F/g). Accroding to the FE-SEM results, the surface of the carbon cloth becomes rough and hydrophilic after the hydrogen plasma pre-treatment, leading to the improved adhesion and uniformity of diamond powder on carbon cloth during the seeding process, results in a sufficient amount of uniformly distributed nucleation sites on carbon cloth to induce uniform deposition of N-UNCD for the diamond growth.

In addition, studies have also shown that the specific capacitance value (F/g) of the (ii) Ga2O3 / N-UNCD / CC composite structure is greatly enhanced after being annealed at 600℃ in atmosphere. Accroding to the FE-SEM, Raman and XRD analysis, it can be suggested that the Ga2O3 film coated on the surface of N-UNCD not only protects the underlying EDLC structure (N-UNCD / CC-H2) from being damaged by the high temperature during the annealing process, but also becomes β-Ga2O3 film with better crystallinity (Pseudocapacitor, PC). As a result, it is indicated that carbon-oxygen double bonds (C=O) on carbon cloth might be an important factor to significantly improve the nanostructure and supercapacitance under the synergistic effect of EDLC and PC.

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