研究生: |
鄭景仁 ZHENG - JING REN |
---|---|
論文名稱: |
分子動力學模擬奈米鈦線[0001]/[-12-10]與板材[-12-10]方向單軸拉伸狀態之微觀行為分析 Microbehavior Analysis of Ti Nanowires in [0001]/[-12-10] direction and Nanoplates in [-12-10] direction under uniaxial stretching by Molecular Dynamics Simulation |
指導教授: |
林原慶
Yuan-Ching Lin |
口試委員: |
鍾俊輝
Chun-Hui Chung 雷添壽 Tien-Shou Lei 郭俊良 Chun-Liang Kuo |
學位類別: |
碩士 Master |
系所名稱: |
工程學院 - 機械工程系 Department of Mechanical Engineering |
論文出版年: | 2015 |
畢業學年度: | 103 |
語文別: | 中文 |
論文頁數: | 170 |
中文關鍵詞: | 分子動力學 、奈米線 、奈米板材 、拉伸 、鈦 |
外文關鍵詞: | Molecular Dynamics Simulation, Nanowires, Nanoplates, Stretching, Titanium |
相關次數: | 點閱:292 下載:2 |
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本論文主要研究目的為利用分子動力學,探討鈦奈米線分別在[-12-10]、[0001]方向及鈦奈米板材在[-12-10]方向的拉伸,並以不同應變速率和板材厚度等條件,探討其降伏機理、流動應力及破斷模式。
模擬結果顯示,奈米線與板材在不同應變速率下,其降伏應力與楊氏係數沒有太大變化。鈦奈米線[0001]方向的拉伸在降伏時局部區域會產生HCP晶格扭曲之過渡態,促使HCP晶體由[0001]轉變為[10-10]的拉伸方向,且轉變過程之中會因為晶體扭曲行為,而造成FCC晶體結構的產生。鈦奈米線[-12-10]方向的拉伸,降伏時會啟動HCP之次滑動面系統。鈦奈米線兩個拉伸方向皆會在HCP金字塔平面由表面射入部分差排,造成FCC堆積錯誤的產生,且FCC堆積錯誤隨著拉伸過程逐漸地擴大,並在到達一定量後於堆積錯誤中{111}面上,產生部分差排的滑移,藉由部分差排的不斷滑移,最後造成奈米線的破斷。而鈦奈米板材在[-12-10]方向的拉伸,其降伏機制主要也是以HCP之金字塔平面,由表面產生差排射入,最後奈米板材藉由不斷地從表面射入差排、滑移,致使板材破斷。
The main purpose of this paper is using the molecular dynamics to investigate titanium nanowires in [-12-10] and [0001] direction, and titanium nanoplates in [-12-10] direction of stretch in different strain rates, sheet thickness and other conditions to explore its yield mechanism, the flow stress and the breaking mode.
Simulation results show, when the nanowires and nanoplates of stretch in different strain rates, its yield stress and Young's modulus do not change significantly. When titanium nanowires of stretch yields in [0001] direction, the transition would happened with the HCP crystals from [0001] to [10-10] stretch direction, and it is possible to causes FCC crystals formation in the transition. When titanium nanowires of stretch yields in [-12-10] direction, it will use pyramidal plane system to slip. Titanium nanowires in these two directions would use pyramidal plane system to slip and decomposed into two partial dislocations and cause the FCC stacking fault formation. FCC stacking fault will expand gradually as the stretching process. When it reaches a certain number of FCC stacking fault, the partial dislocations would slip again in FCC stacking fault with FCC {111} planes. With the partial dislocations continues slip in FCC stacking fault, it would finally cause the nanowires breaking. The nanoplates of stretch yields in [-12-10] also use pyramidal plane system to slip. Finally the nanoplates use dislocations slip from nanoplates surface and cause it breaking.
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