本文主要的研究目的在探討近場光學微影加工製程及非破壞方法逆解光纖探針口徑之相關研究。首先對光纖探針近場的分析，本文以近區輻射場理論做為分析光纖探針近場之理論模式，分析探討裸光纖探針及鍍鋁層探針的近場分佈，並對平行光與高斯光束通過光纖探針之近場模擬。本文的實驗成果與理論模擬成果均可達半高線寬為100 nm以下的近場光學微影加工。
其次探討近場光學微影加工理論模式及實驗，包括點加工、線加工、曲線加工理論模式。先分析高斯光束通過鍍鋁層光纖探針之近場光功率密度分佈，提出點加工、線加工、曲線加工之曝光能量密度公式來分析光阻表面之曝光能量密度分佈情形。並將光阻分割成有限節點，結合曝光能量密度公式，計算出曝光後光阻內部有限各節點光活性化合物(PAC)的濃度變化，最後結合Mack之顯影模式計算出光阻顯影後之加工外形及半高線寬。同時本文提出最佳化搜尋合乎允許最大弦誤差範圍內之插值點方法，以建立近場光學微影加工之曲線。在近場光學微影加工實驗方面，本文先對光阻做Dill A、B、C參數之量測分析，並進行近場光學點加工、線加工之微影加工實驗及光纖探針口徑確認工作，驗證所建之近場光學微影加工理論模式為合理的。
本文進一步建立以非破壞方法逆解光纖探針口徑理論模式，提出以線段微影加工實驗結果與近場光學微影線段加工理論模式之模擬結果的兩者結果誤差為目標函數，並透過Levenberg-Marquardt Method搜尋及合理的收斂準則，逆解出合乎實驗與理論模式之光纖探針口徑。同時透過比較線段微影加工實驗與逆解探針口徑結果模擬之兩者加工外形，以驗證逆解之光纖探針口徑為合理可接受的。最後本文提出「階段式田口類神經網路模式」，結合田口法及類神經網路建構近場光學微影加工實驗預測模式，以建立一套實驗次數少、預測時間短且預測精度高之田口類神經網路。由網路之分析結果，證實了本文所建構之田口類神經網路模式，比傳統田口加法模式可提供更為精確的預測結果，同時可改善傳統類神經網路需大量訓練例之缺點。

The major research objective of this thesis is to investigate the process researches which relate to near field photolithography process and inverse calculation of the probe aperture size by nondestructive method. With regards to the analysis of the near field of fiber probe, this thesis firstly uses near field radiation theory to be the equation when analyzing the near field of fiber probe, so as to analyze the near field distribution of the uncoated probe and the aluminum coated fiber probe. Also, it undergoes near field simulation when the direction light and the Gaussian beam pass through the fiber probe. The FWHM of practice experiment results and simulation results of theoretical model can be under 100 nm.
Secondly, this thesis analyzes into the theoretical model and the experimental research of the near field photolithographic fabrication, and the theoretical model includes point fabrication, line fabrication or curvilinear fabrication. It firstly analyzes into the near field light power density distribution when the Gaussian beam passes through the aluminum coated fiber probe, then the exposure energy density equation of abovementioned three fabrication model are proposed to analyze the surface exposure distribution of the photoresist. Also, it dissects the photoresist into finite nodes, and by combining with the exposure energy density equation, it calculates the concentration change of the PAC of the respective finite node insides the photoresist upon exposure. Finally, combined with the development model of Mack, the fabrication profile and the FWHM of the photoresist after development are calculated. This thesis proposes to use optimal method to search for the interpolation that matches with the allowable maximum range of chord error to build a curve of near field photolithographic fabrication. In the aspect of experiment of the near field photolithographic point fabrication, this thesis firstly undergoes Dill A, B and C parameters measurement analysis towards the photoresist, then, confirms the experiments of near field photolithographic point or linear fabrication and the fiber probe aperture size, so as to verify that the theoretical model of the near field photolithographic point fabrication established in this thesis is reasonable.
Furthermore, the theoretical model of inverse calculation of fiber probe aperture size by means of non-destructive procedure is built up, and the error between the result of the photolithographic line fabrication experiment and the simulation result of the theoretical model of the near field photolithographic line fabrication being set as the target function is proposed. By through of Levenberg-Marquardt search and a reasonable convergence criterion, a fiber probe aperture size that matches with the experiment of photolithographic line fabrication experiment and the theoretical model of the near field photolithographic line fabrication is obtained by inverse analytical method. At the same time, by comparing the processing profile of the photolithographic line fabrication experiment and the simulation result of the inverse calculation of the fiber probe aperture size, the inverse calculated fiber probe aperture size is verified and proved which is reasonable and acceptable. At last, combined with Taguchi’s Method and artificial neural network, a Progressive Taguchi-Neural Network Model is proposed in this thesis to establish a prediction model of near field photolithography processing experimen, so as to build a Taguchi’s ANN that requires fewer experiment frequencies and higher prediction accuracy. By the network analytical result, it is confirmed that the Taguchi’s artificial neural network model constructed in this thesis can more accurately predict the result than the traditional Taguchi’s addition model. At the same time, it can improve the demerit of the traditional artificial neural network requiring for large numbers of training examples.

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