本論文主要內容在於研究五苯環有機薄膜電晶體搭配底接觸式結構之元件製作以及其電特性分析與改善。首先，以傳統的底接觸式結構製作固定元件通道寬度、不同元件通道長度之有機薄膜電晶體元件，發現元件特性會隨著通道長度的縮減，而有下降的趨勢，如載子移動率隨著通道長度縮減而減少。此現象與大多其他相關文獻所探討的一致，但文獻中只定性地描述此現象之機制，缺少一數學公式可以對此現象進行定量上的分析與預測。因此，我們依據此現象之機制而提出了一修改過的公式，可對底接觸式有機薄膜電晶體之特性隨著通道長度的縮減而下降，進行定量上的探討。即在底接觸式結構中，有機半導體主動層在金屬源/汲極附近成長品質較差，此主動層區域的載子移動率遠低於通道中央的移動率，此低載子移動率的主動層區域對元件整體的載子移動率計算中的權數，會隨著通道長度的縮減而增加，而使元件整體的載子移動率下降。
再者，因上述有機半導體層在底接觸式元件結構中，靠近源/汲極附近的成長品質不佳除了造成低載子移動率區域外，更導致金屬與有機半導體之間介面的載子注入效率降低而使得接觸電阻上升；並且當通道長度越短時，元件效能就會跟著進一步下降。我們針對此問題提出一個具新穎性之雙層絕緣層平面化底接觸式元件結構，此結構之源/汲極與閘極絕緣層是製作成切齊於同一個平面，讓有機半導體層可沉積在此沒有高低起伏的平面上，而改善有機半導體層在源/汲極附近的成長品質以及金半介面的載子注入效率，因此電特性獲得大幅改善。此外，為了讓有機薄膜電晶體可應用於主動式矩陣有機發光二極體顯示器面板中，達到高畫素開口率與高元件積體化密度，元件尺寸的微縮與元件效能的提升為其重點。因而我們進一步地引用雙層絕緣層平面化底接觸式元件結構，製作出次微米的有機薄膜電晶體元件，並達到傳統底接觸式結構之元件在也微縮至次微米尺寸時無法可及的高效能。
底接觸式以及底閘極結構的有機薄膜電晶體，其有機主動層位於閘極絕緣層之上，而使得有機主動層的薄膜成長品質會受到閘極絕緣層表面特性的影響。因此，我們使用紫外光臭氧處理技術，以清除閘極絕緣層表面上經黃光製程定義源/汲極後可能殘留的有機污染；隨後再利用一自我組裝分子膜HMDS來改善閘極絕緣層的表面能，其改善後之表面能將適合有機主動層之薄膜成長。因閘極絕緣層的表面缺陷減少許多，與在其之上的有機主動層薄膜成長品質受到改善，而使有機薄膜電晶體的電特性大幅增加，其載子移動率可增加3個數量級之多。

In this thesis, we study on the device fabrication and electrical performance analysis and improvement of pentacene-based organic thin-film transistors (OTFTs) with bottom-contact (BC) structure. First, OTFTs with BC structure were fabricated with a fixed channel width and various channel lengths. It was found that the device performance deteriorated with the channel length, such as the carrier mobility decreased as the channel length decreased. This phenomenon is consistent with the discussion of the related reports; however, in the related reports, there was only qualitative description for this phenomenon, and no equation can quantitatively verify the experimental data or predict the trend of mobility with the channel length in the BC structure. Hence, we propose a mechanism, which is a modified formula, to present the channel length dependence on the field-effect mobility. In BC structure, the organic semiconductor active layer has worse growth quality near the edge of the source/drain (S/D) electrodes than that at middle region of channel. Therefore, the mobility near the S/D electrodes is much lower than that at middle region of channel. Furthermore, the mobility near the S/D electrodes has a greater weighting factor for the extracted overall mobility of device when the channel length becomes shorter, resulting in the decreased extracted overall mobility.
Second, because of the above-mentioned BC structure, the organic semiconductor layer has worse growth quality near the S/D electrodes, resulting in the low mobility region and the reduced carrier injection efficiency between metal and organic layer, which cause the increased contact resistance. When the channel length of OTFT device is decreased more, the electrical performance deteriorates further. Hence, we propose an alternative planar bottom-contact (pBC) structure to enhance the electrical performance of pentacene-based OTFTs. This pBC structure uses a bilayer dielectric to control planarization with a precise etch depth, and the planarization produces an optimum flatness near the S/D to improve the growth quality and continuity of pentacene. Because of the improved growth continuity of pentacene near the S/D, the contact resistance between the S/D and the pentacene was reduced significantly, thereby enhancing the electrical performance of OTFTs. In addition, reducing the channel length and improving the electrical performance for OTFTs are useful strategies for increasing the aperture ratio of pixels and high integration for active-matrix organic light-emitting displays (AMOLEDs). We introduced the pBC structure with bilayer dielectric to fabricate pentacene-based OTFTs with sub-micrometer channel length, and the pBC OTFTs had the high electrical performance that the conventional BC structure can't achieve.
The OTFTs with bottom-contact (BC) and bottom-gate structure have the organic active layer upon gate insulator; hence, the surface properties of gate insulator can affect the growth quality of organic layer. We used the UV/ozone cleaning to remove the organic contamination or residue that could be from the photolithography process for patterning S/D. After UV/ozone cleaning, we introduced a self-assembled monolayer (SAM), hexamethyldisilazane (HMDS), to improve the surface energy of gate insulator, which can be suitable for organic layer growth. Because the surface energy and the trap state density of the gate insulator were effectively improved, the combined scheme can significantly increase the performances of OTFTs, such that the mobility was dramatically increased by about three orders of magnitude.

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