微波介電陶瓷材料在智慧型裝置及全球衛星定位系統等無線傳輸及可攜式裝置中扮演重要的角色，本研究探討具新穎性之微波介電材料-透輝石相玻璃陶瓷 (diopside, CaMgSi2O6);透輝石相材料具有低介電常數(dielectric constant, k)、低成本、高品質因子(quality factor, Q*f)及低於900度之燒結溫度，因此透輝石相玻璃陶瓷具有發展低溫共燒技術(LTCC, Low Temperature Co-fired Ceramic)之潛力；然而透輝石相不具有趨近於零的溫度係數共振頻率(temperature coefficient of resonance frequency, τf)，因此選擇鈦酸鋅補償透輝石相的溫度係數共振頻率；接下來將改質後之透輝石材料系統於大氣下與銀電極共燒，並探討共燒後之銀電極擴散之影響並進行抑制。
本論文第一部分添加不同比例鈦酸鋅陶瓷粉體，並於825℃~900℃進行兩小時的熱處理;首先可從縮率及密度判斷，試片無法在低於850℃燒結緻密，當熱處理溫度升高到850℃，試片之縮率或密度皆大幅上升；另一方面可從XRD數據中觀察出許多二次相產生，例如:(Zn(1-x)Mgx)SiO4、(Zn(1-x)Mgx)TiO3等等，其中(Zn(1-x)Mgx)SiO4為一低介電常數及高品質因子之矽酸鹽陶瓷，而(Zn(1-x)Mgx)TiO3則具有正值之溫度係數共振頻率，綜合考量介電常數、品質因子及溫度係數共振頻率，透輝石相與30wt%鈦酸鋅陶瓷粉體於875℃熱處理後可得k=9.2, Q*f=8232GHz, τf = -17.7ppm/℃。
電極擴散會影響元件之工作頻率及效率，而銀離子在燒結過程氧化後與玻璃鍵結且往透輝石玻璃陶瓷基材擴散；因而在本論文之第二部份期望設計在大氣下共燒之機制；許多文獻提到抑制電極擴散的方式，例如:添加陶瓷相或是非晶質氧化矽；而從上一章節之研究成果可知，添加鈦酸鋅後已產生鋅鎂之矽酸鹽或鈦酸鹽陶瓷相，故本研究中選用添加非晶質氧化矽以抑制銀電極擴散；奈米尺寸之非晶質氧化矽可在700℃左右形成石英相，有效阻隔銀離子繼續往基材擴散，將改質後之透輝石相玻璃陶瓷添加4wt%非晶質氧化矽後進行SEM-EDS linescan觀察電極擴散距離或含量，可明顯觀察出電極擴散有被抑制的效果。

Microwave dielectric ceramic materials play an important role in the wireless communications and portable devices, such as global positioning systems (GPS) and mobile phones. This study focuses on a novel microwave dielectric material - diopside (CaMgSi2O6) glass-ceramic. Diopside material has a unique character of low dielectric constant (k), low cost, high quality factor (Q*f value) and lower than 900℃ sintering temperature. Therefore, diopside is a potential candidate material for LTCC (Low Temperature Co-fired Ceramic) process. However, the large temperature coefficient of resonance frequency (τf), -60ppm/℃, is unstable to be applied in microwave dielectric components. In this case, ZnTiO3 was chosen to compensate the large negative temperature coefficient of resonance frequency (τf) of diopside glass-ceramics. Followed by this result, the microstructure analysis and electrode inhibition after co-fired with silver electrode were carried out by SEM-EDS in this work.
In the first part of this research, different ratio of ZnTiO3 powder were added into diopside glass-ceramic and the heat treatment were carried out at 825~900℃ for 2 hours. In the beginning, specimens were unable to be densified at 825℃. As increasing heat treatment temperature, the specimens can be densified, from 850℃~ 900℃. Simultaneously, some silicate and titanate secondary phases with excellent microwave dielectric properties were formed, such as (Zn(1-x)Mgx)SiO4 with low dielectric constant and (Zn(1-x)Mgx)TiO3 with positive τf.. Therefore, the microwave dielectric properties of diopside material can be improved by these secondary phases. Finally, the optimal ratio is diopside with 30wt% ZnTiO3 addition, which contains the following key characteristics: k=9.2, Q*f=8232GHz, τf = -17.7ppm/℃
Electrode diffusion usually makes serious damages for components in changing the frequency unexpectedly and overall efficiency of components. Generally, silver ions are oxidized easily then diffuse into diopside glass-ceramics substrate during sintering process. To avoid the phenomena of silver diffusion, a sintering mechanisms without atmosphere control was used. According to references, ceramic phases or amorphous silica are used as both ways can inhibit the electrode diffusion efficiently. As demonstrating in previous chapter, some ceramic phases, silicate or titanate secondary phases, have been formed after adding ZnTiO3 during sintering process, the amorphous silica was chosen to inhibit silver diffusion in this research. Nanoscale amorphous silica forms quartz phase in sintering process around 700℃, and the quartz will become a obstacle for silver diffusion. The efficiency of diffusion effect can be measured by using sem-eds linescan. In conclusion, the optimal solution is to add 4wt% amorphous silica, which diminishes the diffusion effect of silver ions significantly.

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