本研究探討了超奈米鑽石等寬能隙材料複合於不同結構之矽基板上作為超級電容器之應用，並探討退火之後處理對此結構之影響。內文將分為三個部分，第一部分提升超奈米鑽石複合於矽基板上之均勻性與密度，並探討不同溫度之退火後處理對超奈米鑽石於矽基板結構之影響；第二部分將h-BN溶液分別以10、30μL滴在超奈米鑽石於矽基板結構，利用微波電漿成長碳氮化硼，探討不同溫度之退火後處理對碳氮化硼複合超奈米鑽石於矽基板結構之特性影響；第三部分則是將h-BN+Daimond溶液分別以10、30μL滴在超奈米鑽石於矽基板結構，利用微波電漿成長碳氮化硼，探討不同溫度之退火後處理對碳氮化硼複合超奈米鑽石於矽基板結構之特性影響：Type I: N-UNCD / N-Si、Type II: BCN－(N-UNCD) / N-Si、Type III: BCN / N-UNCD / N-Si
本研究發現，使用微波電漿輔助化學氣相沉積系統對碳布基板進行電漿處理，可以有效提升超奈米鑽石於矽基板之均勻性，亦提升其作為超級電容器之重量比電容值，並將成長完之超奈米鑽石於矽基板利用氮氣退火後處理，可發現電容值從6.58提升至73.37(F/g)，其充放電循環穩定性提升至145%，當超奈米鑽石成長於矽奈米線經氮氣退火處理後，可發現電容值從42.75提升至78.85(F/g)，其充放電循環穩定性提升至247%。
此外，研究亦發現不同溫度之退火後處理對碳氮化硼複合超奈米鑽石於矽奈米線結構，其充放電循環穩定性提升至275%－－搭配FE-SEM、XRD和XPS之分析可推測氮氣退火後，使B-C-N之比例改變，其因在退火過程中保護下層之EDLC結構，其不被退火之高溫破壞，同時其自身亦形成結晶性，並與矽奈米線更好的複合，最終在EDLC和PC (Pseudocapacitor) 之協同作用下顯著提升了其電容值；最後，其重量比電容值在經過3000次循環充放電後提升為初始值的275%，表明此種BCN / N-UNCD / SiNWs新型複合結構具有優異之循環穩定性。

In this study, we combined two materials: nanocrystalline diamond (UNCD) and Boron Carbon Nitride (BCN) films on silicon substrate, forming three types of novel composite structures: (i) N-UNCD/N -Si, (ii) BCN-(N-UNCD) / N-Si and (iii) BCN / N-UNCD / N-Si for supercapacitors. This study found that the microwave plasma-assisted chemical vapor deposition process can effectively improve the uniformity of ultra-nanodiamonds on silicon substrates, and also improve the gravimetric capacitance value of supercapacitors. After annealing the ultra-nanodiamond grown(25 mins) on the silicon substrate with nitrogen for 800 C, it can be found that the capacitance value is increased from 6.58 to 73.37 (F/g), and the charge-discharge cycle stability is improved to 145%. When ultra-nanodiamond grown(25 mins) on silicon nanowires(SiNWs), which was annealed with nitrogen, and the capacitance value was increased from 42.75 to 78.85 (F/g), and its charge-discharge cycle stability was improved significantly to 247%.
In addition, it is also found that the capacitance value increased from 13.98 to 34.75 (F/g) and the charge-discharge cycle stability of the carbon-boron nitride composite nanodiamond in the silicon nanowire structure(BCN/N-UNCD/SiNWs) increased up to 275% after annealing at 800 C. With the analysis of FE-SEM, XRD and XPS, it can be suggested that the nitrogen annealing treatment changes the ratio of B-C-N, which protects the underlying EDLC structure during the annealing process, which is not damaged by the high temperature of annealing, and also forms better crystallinity, and better compounded with silicon nanowires, and finally significantly improved its capacitance value under the synergistic effect of EDLC and PC (Pseudocapacito). This studies indicates that the composite structure of BCN/N-UNCD/SiNWs possesses reasonable capacitance properties with high cycling stability which provides an novel supercapacitor application in the electronic industry .

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