全無機溴化銫鉛量子點由於優秀的光電性質和發光特性被譽為下一世代鈣鈦礦量子點發光二極體的首選材料，然而全無機銫鉛鹵素鈣鈦礦量子點發光二極體之效能受限於:(1)合成量子點時添加的長碳鏈配體(2)各層結構界面工程。本研究主要探討以熱注入合成法進行溴化銫鉛鈣鈦礦綠光量子點製備與光電性質分析，並以短配體置換工程以及表面配體最適化策略製備量子點發光二極體進行光電性質分析。本研究以熱注入合成法製備溴化銫鉛鈣鈦礦綠光量子點用來製備發光二極體，由於量子點表面的長碳鏈配體形成一絕緣層，導致載子注入與傳輸不易。需經過不同次數清洗純化程序後才可應用；清洗程序伴隨螢光量子效率、溶液保存性和成膜性不佳。透過短碳鏈配體置換後可承受多次清洗程序且維持優良的溶液分散性、均勻成膜性和螢光量子效率，透過溴化苯乙胺分子層與聚甲基丙烯酸甲酯的鈍化修飾量子點薄膜底部與頂部之間的界面缺陷，可使發光二極體之啟動電壓降低至2.7 V，最高輝度達354.0 cd/m2，最大電流效率與外部量子效率分別為35.7 cd/A與11.1 %。

All inorganic CsPbBr3 perovskite quantum dots (PeQDs) have praised as prior candidates for next-generation perovskite quantum dots light-emitting diodes (PeQLEDs) applications due to their excellent optoelectronic and light-emitting properties. However, the performance of CsPbBr3 based PeQLEDs is impdede by (i) the long insulating ligands linked on the surface of QDs (ii) the complex issue of device structure. This study synthesized CsPbBr3 quantum dots via hot-injection method and focused on the ligang exchange method and optimizing the density of QD’s surface. Firstly, the photoluminescence quantum yield (PLQY) of cesium lead bromide (CsPbBr3) PQDs may decrease during the wash process. Low ink stability and film morphology also are damaged by the this process. After shor chain ligang exchange, the cesium lead bromide (CsPbBr3) PQDs can endure the damage of anti-solvent. The PQDs were treated by short ligands exchange and different times of wash cycle,The turn-on voltage (Von), maximum luminance (Lummax), current efficiency (CE) and external quantum efficiency (EQE) of purification process cesium lead bromide (CsPbBr3) QD-LED were 4.1 V, 365.0 cd/m2, 23.5 cd/A and 7.34 %. Finally, the passivation strategy maily focus on the interface between hole transport layer and CsPbBr3 thin film and the interface between CsPbBr3 thin film and electron transport layer. 2-phenylethanamine bromide (PEA-Br) and poly(methyl methacrylate) act as passivation layer to modify the interface. The turn-on voltage (Von), maximum luminance (Lummax), current efficiency (CE) and external quantum efficiency (EQE) of purification process cesium lead bromide (CsPbBr3) QD-LED were 2.7 V, 354.0 cd/m2, 35.7 cd/A and 11.1 %

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