本論文主要利用雙量子井結構將各光學主被動元件積體化，所積體化之元件包含分佈反饋式雷射（DFB）及電致吸收調變器（EAM）的結合，並利用多模干涉耦合器將波長分別為1.58 μm及1.6 μm之雙雷射陣列進行耦合，最後串接半導體光放大器（SOA）將光源輸出做放大，使之能應用於無色光源技術的局端中，幫助分波多工被動光網路降低雷射發射源的成本，並避免離散元件在各別封裝上的耦合損耗。
　　雙量子井中均採用具壓縮應力的磷砷化銦鎵材料，其中一組量子井規畫為光增益波段，經由模擬與實作成法布里-比洛雷射，得知其發光增益峰值能隙介於1.58 μm至1.6 μm之間，故將DFB雷射及SOA的材料能隙設計於此波段，並規劃兩組雷射發光波長分別座落於1.58 μm與1.6 μm；另一組量子井，則設計材料吸收峰值位於1.51 μm，利用量子侷限史塔克效應會使之紅位移的特性，控制1.58 μm處是否為吸收峰值，故我們將MMI波導與EAM波長規劃於此波段，以期能達成高效率的電致吸收調變雷射（EML）。
　　為提升本元件雙波長位置精準度，本論文利用繞射測量的方式，準確控制全像術曝光製作出來的光柵，預測之布拉格波長為1.58 μm，與最後製作完成的DFB雷射發光波長1.585 μm，誤差值小於5 nm。就元件實作成果，在DFB雷射元件的特性方面，共振腔長約800 μm的雷射臨限電流約為100 mA，最大功率可達2.3 mW，旁模抑制比約大於20 dB。在EAM元件方面，其調變在1.58 μm處尚有調變效果。而在EML之間利用離子佈植製作的電性隔離，其電阻值約在3 kΩ。
　　應用三維光束傳輸法模擬量子井波導元件的光場，可分析波導模態、波導彎曲損耗及MMI元件自我成像位置，來設計MMI耦合器，分析整體結果其插入損耗約為0.506 dB。最後在MMI的實作成果方面，於本論文是利用SOA當作光源及光偵測器，量測實際製作出的元件，得到插入損耗約為0.706 dB。而耦光比約為61.69/38.31，應為製程上的誤差所致。

　This thesis focuses on the monolithically integration of dual-wavelength distributed feedback (DFB) laser array, semiconductor optical amplifier (SOA), electro-absorption modulator (EAM) and multi-mode interference (MMI) coupler by using the dual multi-quantum wells (DQWs) platform. The benefit of this device is to provide optical amplification, optical modulation and optical propagating/combining on the same chip without suffering from the coupling issue between individual elements. This dual-wavelength light source can be used to simultaneously generate upstream/downstream signals for applications in the colorless wavelength-division multiplexing passive optical network (WDM-PON) systems.
　The design of DQWs is the key to the success of this device. The DQWs consist of two sets of compressively strained InGaAsP multi-quantum well (MQW). Upper MQW layers are to provide optical gain for DFB lasers and SOAs covering wavelengths between 1.58 μm and 1.6 μm while the bottom MQW layers are to provide optical absorption at 1.58μm of wavelength for revised biased EAMs. The bottom MQW set is also designed as the passive waveguide material for MMI couplers. 1X2 MMI coupler is designed to combine two signals generated from two parallel DFB lasers with low insertion loss using three-dimensional Beam Propagation Method.
　We successfully applied holography exposure to produce dual-wavelength grating for DFB lasers and verify the grating period using diffractive measurement. We found that the error of DFB wavelength was less than 5 nm. Fabricated DFB laser has a threshold current of around 100 mA, a maximum output power of 2.3 mW, a side-mode suppression ratio (SMSR) of around 20 dB and a contact resistance of around 3Ω to 10Ω, respectively. Fabricated EAM is able to provide optical modulation at wavelength band between 1.54 μm to 1.56 μm. Electrical isolation between DFB laser and EAM region is done by ion implantation and the resistance between each other is about 3 kΩ.
Several SOAs are used as on-chip light sources and detectors to characterize the insertion loss and coupling ratio of fabricated MMI couplers. The results determine that the insertion loss was about 0.706 dB, which is close to the calculated value of 0.506 dB, while the coupling ratio was about 61.69/38.31. Further lithography and etching process optimization is needed to achieve equal coupling ratio of the couplers.

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