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研究生： 唐超
Chao - Tang
論文名稱： 不同觸媒對溫度控制成長硫化鋅一維奈米結構之影響
The Effects of Catalysts on the Temperature-controlled Growth of One-dimensional Zinc Sulfide Nanostructures
指導教授： 郭東昊
Dong-Hau Kuo
鄭如茵
Ju-Yin Cheng
口試委員: 周振嘉
Chen-Chia Chou
林惠娟
none
學位類別： 碩士
Master
系所名稱： 工程學院 - 材料科學與工程系
Department of Materials Science and Engineering
論文出版年： 2009
畢業學年度： 97
語文別： 中文
論文頁數： 104
中文關鍵詞： 硫化鋅 、一維材料 、奈米結構
外文關鍵詞： ZnS, one-dimensinal materials, nanostructures
相關次數： 點閱：243  下載：3 
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  •  上一筆

    • 硫化鋅因具有3.7eV的能帶差，且是直接能隙材料，所以一直被視為極具有潛力的光電材料之一。硫化鋅也是第一個被發現的半導體之一，並且至今已應用在許多不同的領域中，比如：光電元件、發光二極體、平面顯示器、感測器與太陽能電池等。本篇論文將分為兩部分，第一部分先利用不同溫度揮發鋅源與硫源，於鍍金的矽基板上成長不同形態的硫化鋅一維奈米結構；第二部分則分別在矽基板上鍍上金、鐵、錫、銦等雙層觸媒組合，探討不同觸媒對於成長硫化鋅一維奈米結構的影響。
    第一部分分別將獨立鋅源、硫源與基板放置於不同溫區成長硫化鋅一維奈米結構。經過SEM顯微結構的觀察，基板置於800℃、鋅源於800℃與硫源300℃可成長出大量且純度高的硫化鋅奈米線，並在PL光譜儀分析中觀測到因本質缺陷所導致的520nm左右的高強度純綠光波峰。
    第二部分則是在矽基板上濺鍍金、鐵、錫、銦等雙層觸媒組合並置入系統中成長硫化鋅奈米結構。經過SEM顯微結構的觀察，除了可發現奈米線與奈米帶等原本形態外，也可發現到奈米棒與奈米環等不同結構。

    Zinc sulfide(ZnS), as a II-VI semiconductor with a band gap energy of 3.7 eV, has received much attention due to its excellent properties, such as large band-gap energy, direct recombination and resistance to high electric field. Zinc sulfide is also one of the first semiconductors discovered and probably one of the most important materials in the electronics in a wide range of applications, including optical devices, LED, flat panel displays, sensors, and solar cells etc.
    In the first part of our study, one-dimensional ZnS nanostructures such as nanowires and nanobelts were fabricated by controlling the temperatures of substrates, Zinc source, and Sulfur source individually. The characteristics and optical properties were analyzed by XRD, SEM, TEM, and PL spectra. Large scale and high purity nanowires were synthesised at the conditions of substrates temperature at 800℃, Zinc source at 800℃, Sulfide source at 300℃. From PL spectra, the ZnS nanowires have a PL band position with strong green emission band centered at about 520nm.
    In the second part of our study, ZnS nanostructures were grown on the Si substrates coated with two metallic layers of Au, Fe, In or Sn. Except for nanowires and nanobelts, nanorods and nanorings were also observed by using SEM.

    摘要I AbstractII 目錄III 圖目錄VI 表目錄XV 第一章 導論1 1-1 前言1 1-2 奈米材料2 1-2-1 奈米材料特性簡介2 1-2-2 奈米材料結構2 1-2-3 奈米線之VLS 及VS 成長模式簡介3 1-2-4 奈米材料的特性8 1-2-5 一維奈米材料13 第二章 硫化鋅一維奈米材料15 2-1 硫化鋅歷史,,15 2-2 硫化鋅之結構16 2-3 硫化鋅的性質與應用18 2-4 硫化鋅一維奈米材料20 2-4-1 熱蒸汽法氣相沉積成長硫化鋅一維奈米材料20 2-4-2 碳反應化學氣相沉積成長一維奈米材料28 2-4-3 化學氣相沉積法將材料源置於不同溫區成長硫化鋅奈米線29 第三章 實驗方法與步驟33 3-1 實驗設備33 3-1-1 鍍金機33 3-1-2 DC濺鍍機( DC-Sputter )33 3-1-3 磁控RF濺鍍機( RF-Sputter )33 3-1-4 自組式熱壓機33 3-1-5 自組式水平管型高溫爐34 3-2 實驗藥品選擇35 3-3實驗流程36 3-3-1 基板清洗37 3-3-2 製作濺鍍靶材38 3-3-3 濺鍍金屬層39 3-3-4 CVD爐管加熱39 3-4 實驗分析儀器40 3-4-1 掃瞄式電子顯微鏡40 3-4-2 場發射掃描式電子顯微鏡40 3-4-3 能量散佈光譜儀40 3-4-4 穿透式電子顯微鏡41 3-4-5 X光粉末繞射儀系統41 3-4-6 光激螢光光譜儀41 3-5 實驗製程參數42 第四章 實驗結果與討論（1）－ 溫度控制成長硫化鋅一維奈米結構43 4-1 基板溫度影響成長硫化鋅一維奈米結構43 4-1-1 XRD分析46 4-1-2 PL分析47 4-2 基板溫度900℃時，不同鋅源溫度成長硫化鋅ㄧ維奈米結構51 4-2-1 XRD分析52 4-2-2 PL分析53 4-3 基板溫度800℃時，不同鋅源溫度成長硫化鋅ㄧ維奈米結構55 4-3-1 XRD分析57 4-3-2 PL分析58 4-4 硫源溫度影響成長硫化鋅一維奈米結構59 4-5 硫化鋅一維材料成份與結構分析60 4-5-1 EDX分析60 4-5-2 TEM分析63 4-6 探討硫化鋅奈米結構的成長機制與光學性質66 第五章 實驗結果與討論（2）－雙層觸媒基板成長硫化鋅一維奈米結構71 5-1 基板800℃、鋅源於800℃與硫源300℃於雙層觸媒基板上成長硫化鋅奈米結構71 5-1-1 於金為底層的雙層觸媒基板上成長硫化鋅奈米結構71 5-1-2 於鐵為底層的雙層觸媒基板上成長硫化鋅奈米結構74 5-1-3 於銦為底層的雙層觸媒基板上成長硫化鋅奈米結構78 5-1-4 於錫為底層的雙層觸媒基板上成長硫化鋅奈米結構82 5-2 基板700℃、鋅源於700℃與硫源700℃於雙層觸媒基板上成長硫化鋅奈米結構86 5-2-1 於金為底層的雙層觸媒基板上成長硫化鋅奈米結構86 5-2-2 於鐵為底層的雙層觸媒基板上成長硫化鋅奈米結構90 5-2-3 於銦為底層的雙層觸媒基板上成長硫化鋅奈米結構92 5-2-4 於錫為底層的雙層觸媒基板上成長硫化鋅奈米結構94 5-3 觸媒位於上下層對於成長硫化鋅奈米結構的影響96 5-3-1 利用In/Au基板成長硫化鋅奈米帶的成長機制探討96 5-3-2 利用Au/In基板成長硫化鋅奈米棒的成長機制探討97 第六章 結論99 6-1 溫度控制成長硫化鋅一維奈米結構99 6-2 雙層觸媒基板成長硫化鋅一維奈米結構100 參考文獻101

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