本論文探討應用於晶片間光互連的積體電路，利用CIC之CMOS製程來設計積體電路。文中探討三個主題，矽發光晶片、矽光二極體、轉阻放大器與限幅放大器。
第一部分探討矽發光元件的研製，採用指叉式結構來研究矽發光晶片的發光特性，並加以改善，設計的P-N接面矽發光晶片，在面積200 × 300 µm2下，所得外部量子效率為3.7×10-6 。
第二部分為利用我們所設計的矽光二極體（Si-Photodiode）來反向操作，並觀察其作為光偵測器的特性，所得PNNP型矽光二極體之最高反應率R＝0.3（A/W）與量子效率 ＝0.26，。
最後為後端放大器設計，包括轉阻放大器與限幅放大器，轉阻放大器量測所得轉阻為93.6dBΩ，-3dB頻寛約為38MHz，限幅放大器量測所得放大率為26.8dB，-3dB頻寛約為16.63MHz，最後，觀察晶片與晶片間光互連之量測結果。
以上共涵蓋三個主題，相同的特色就是皆採用矽為材料，並以CMOS來實現，本論文著重於以矽為基底，再進一步去設計，有利於光互連與光電積體電路的開發。

In this thesis, a study of integration circuits for chip-to-chip optical interconnect is presented. CMOS process provided by CIC (Chip Implement Center) is used. Here, we study three topics: the silicon light emission, the silicon photodiode, the transimpedance and limiting amplifiers.
The first part deals with the CMOS silicon light-emitting chip. Finger structures are used to study the efficiency of light emission. Silicon light emission chips of pn junctions are designed. The maximum quantum external efficiency obtained is 3.7×10-6 with an area of 200×300 µm2.
The second part is about the silicon photodiode chip, The PNNP type has a maximum responsivity R=0.3(A/W) and a quantum efficiency =0.26.
The last topic is about the the transimpedance amplifier and limiting amplifier .Our transimpedance amplifier has 93.6dBΩ transimpedance and 38MHz bandwidth.Our limiting amplifier has 26.8dB gain and 16.63MHz bandwidth, Finally, the last measurement result of chip-to-chip interconnect is presented
In the topics mentioned above, they have the same feature in the use of material, and it can be applied to the opto-electronic interconnect among integrated circuit chips.

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