硒化鋅因具有2.7eV的能帶差，且是直接能隙材料，所以一直被視為極具有潛力的光電材料之一，至今已應用在許多不同的領域中，比如：光電元件、發光二極體、平面顯示器、感測器與太陽能電池等。
本實驗以鋅粉和硒粉作為材料源，在鍍有金觸媒的(100)矽基板上經由氣相沉積法成長硒化鋅奈米線 。我們使用旋鍍法製作一層氧化鋁薄膜，用來分散金觸媒，使金觸媒在退火的過程中不會聚集而形成更大的顆粒，證明若能有效的降低金觸媒的尺寸就能成長出更細的硒化鋅一維奈米結構。
經過SEM顯微結構的觀察，基板置於800℃、鋅源於800℃與硒源630℃可成長出硒化鋅奈米線，並在PL光譜儀分析中觀測到因本質缺陷所導致的523nm左右的高強度純綠光波峰。

Zinc selenide(ZnSe), as a II-VI semiconductor with a band gap energy of 2.7 eV, has received much attention due to its excellent properties, such as large band-gap energy, direct recombination and resistance to a high electric field. Zinc selenide is one of the most important materials in electro-optics with a wide range of applications, including optical devices, LEDs, flat panel displays, sensors, and solar cells etc.
ZnSe nanowires have been synthesized through a vapor phase reaction of zinc and selenium powders on a (100) silicon substrate coated with gold catalysts. Spin-coated alumina oxide films on Si substrates were used to disperse the gold catalysts and to prevent gold catalysts from clustering as the catalyst films underwent an annealing process. By controlling the size of catalysts, the size of ZnSe nanowires is reduced .
ZnSe nanowires were synthesized with the substrates temperature at 800 oC, the zinc source at 800 oC, and the selenium source at 630oC. The characteristics and optical properties of the ZnSe nanowires were analyzed by XRD, SEM, TEM, and PL spectra. From PL spectra, the ZnS nanowires have a strong green emission band with PL band position centered at about 523nm.

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