本研究之錳酸鍶鑭(La1-xSrxMnO3, LSMO)薄膜因具有高的電阻溫度系數(Temperature coefficient of Resistance, TCR)之特性，所以是應用在非冷卻型紅外線溫度感測器的重要熱敏電阻材料。具鈣鈦礦結構之陶瓷材料如鋯鈦酸鉛(PZT)、鈦酸鍶鉛(PST)及鈦酸鋇(BTO)通常具有高TCR特性，但是電阻值很高，若應用於溫度感測則其電路設計會有難以匹配的問題。但錳酸鍶鑭薄膜在室溫下電阻值小於傳統鈣鈦礦結構約1000倍，且展現高TCR值與良好的紅外線吸收能力，因此以錳酸鍶鑭作為研究對象。
研究中發現，根據測量結果MIM結構在50℃、量測電壓5V所測得之錳酸鍶鑭薄膜呈現正電阻溫度係數(Positive Temperature coefficient of Resistance, PTCR)， TCR值約為2.5%，電阻值約為100M 歐姆。而鍍製於指叉電極微熱敏電阻結構所測得之結果顯示，在室溫下室呈現負電阻溫度係數(Negative Temperature coefficient of Resistance, NTCR)，其TCR之絕對值約為1.6%，電阻值約為17K 歐姆。錳酸鍶鑭薄膜於室溫下之電阻溫度係數-1.6%與2.5%皆大於金屬型微熱敏電阻的電阻溫度係數0.1%，是適合應用於室溫下的高感度感測器。
本實驗元件製作利用微細加工製程在SiO2/Si之基板上製作三種微熱敏電阻元件，並利用RF磁控式濺鍍(sputtering)法製備LSMO薄膜。物性方面使用X光繞射(XRD)進行結晶結構分析，並利用場發射式電子顯微鏡(FESEM)研究薄膜之表面型態與結構分析。電性方面則以半導體特性量測儀(Keithley 4200)搭配可變溫探針站(Probe station)進行為熱敏電阻元件其電阻對溫度的特性量測。

For the high temperature coefficient of resistance (TCR), La1-xSrxMnO3 (LSMO) thin films with perovskite structure is an important material of thermistor which is applied on non-cooled infrared temperature sensor. The conventional ceramic materials with perovskite structure, such as lead zirconate titanate (PZT), lead strontium titanate (PST) and barium titanate (BTO), generally have a high TCR characteristic and high resistance. On the circuit design, the device with high resistance is difficult to be matched. The resistance of LSMO thin film is less than conventional perovskite structure 1000 times at room temperature. Beside that, LSMO show high TCR property, good infrared absorption and low resistance which is 1000 times lesser than conventional perovskite structure, therefore it is a excellent material of thermistor.
In the thesis, LSMO films exhibit positive temperature coefficient of resistance (PTCR) at MIM structure temperature 50 ℃, and biased at 5V. TCR value is about 2.5%, and the resistance is approximately 100 mega ohms. The interdigital electrodes of the micro-thermistor show negative temperature coefficient of resistance (NTCR) at room temperature. The absolute value of TCR is about -1.6%, and the resistance is approximately 17K ohms. At room temperature, the TCR of LSMO thin film is larger than metal micro-thermistor that is 0.1%. As a result, it is high-sensitivity sensors at room temperature
The experimental process is using Semiconductor process to fabricate three kinds of micro thermistor device and RF magnetron sputtering to prepare LSMO film. On the physical characteristic, crystal structure could be analyzed by X-ray diffraction. In addition, surface morphology and cross-sectional structure could be analyzed by Field Emission Scanning Electron Microscopy. On the electrical property, the resistance versus temperature of micro thermistor could be detected by Keithley 4200 and Probe station.

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