本論文主要探討微波通入氮氣交聯PVP閘極絕緣層應用於可撓式元件上，我們起初探討微波應用於玻璃基板的製程，藉此找到微波應用於玻璃基板的最佳製程條件，最後再將此製程條件應用於可撓式元件製程中。
首先，我們利用微波通入不同製程氣體交聯PVP，藉此發現微波通入氮氣的效果最為顯著。其次，透過微波通入不同氮氣流量交聯PVP，我們從中發現微波通入氮氣後，氮可以有效與PVP中的斷鍵、懸浮鍵(dangle bond)鍵解，並且減少PVP中的氫氧根，不過當通入的氮氣過多時，並無法有效降低閘極絕緣層中的氫氧根，反而使微波交聯PVP的效果下降，因此我們選用微波通入氮氣的最佳流量為20sccm。再者，微波通入氮氣在不同加熱時間下交聯PVP可發現當加熱時間到達60分鐘時，其平帶電壓逐漸往VGS=0V的方向偏移，Ioff降了至0.18nA，這代表PVP有充分交聯，以及所通入的氮與斷鍵、懸浮鍵鍵解，使其中的斷鍵、懸浮鍵減少，其元件載子移動率可達到1.516cm2/V-s、S.S只有0.674 V/decade。綜合上述的實驗與分析，選擇微波通入氮氣20sccm 60min為微波應用於玻璃基板的最佳製程條件。
在可撓式元件的製程中，我們選用金屬鋁(Al)為閘極電極，而因為鋁的導電率相較於ITO的導電率提升了103以上，因此我們利用微波照射閘極金屬交聯PVP的加熱時間必須重新抓取，我們經由不同加熱時間測試下找到微波通氮應用於可撓式基板的參數為N2 20 sccm 5 min，其載子移動率可達到1.064cm2/V-s ，S.S 為1.209 V/decade、Vth為 -12.71V，成功做出Mobility>1的可撓式元件。

The research aimed to discuss the application of PVP gate insulator cross-linked by Microwave in N2 ambient in flexible device. We first analyzed the process of Microwave used in glass substrate to find out the best processing condition, and finlly applied the condition to the process of flexible device.
First, we used PVP gate insulator cross-linked by Microwave in different gas ambient, and found that the effect of N2 ambient was the most significant. From using PVP cross-linked by Microwave in different N2 flow ambient, we found that N2 could effectively bond with the broken bond and dangle bond in PVP, and reduced the hydroxyl groups in PVP. However, excessive N2 could not effectively reduce the hydroxyl groups in the gate insulator, but declined the effect of PVP gate insulator cross-linked by Microwave. Thus, we presumed that the best flow in Microwave in N2 ambient was 20sccm. Moreover, we used PVP cross-linked by Microwave under different heating time, and found that when the heating time reached 60 minutes, the flat-band voltage gradually drifted to VGS=0V and Ioff dropped to 0.18nA. It showed that PVP was fully cross-linked and N2 reduced the broken bond and dangle bond by bonding with them. The Mobility could reach 1.516cm2/V-s while S.S was 0.674 V/decade. In summary, we presumed that the best processing condition of Microwave used in glass substrate in N2 ambient was 20sccm at the heating time of 60 minutes.
In the process of flexible device, we used Al as the gate metal because its conductivity increased by above 103 compared to the result of ITO. Thus, the heating time of gate metal cross-linked PVP using Microwave irradiation must be remeasured.
Through the experiments under different heating time, we found that the parameter of Microwave in N2 ambient applied to flexible substrate was N2 20 sccm 5 min while its Mobility could reach 1.064cm2/V-s, S.S was 1.209 V/decade, and Vth was -12.71V. The flexible device which met Mobility>1 was fabricated successfully.

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