為了應用於紅外光醫療，本論文欲製作波長位置在4~12 μm波段之紅外光熱輻射光源，為了達到濾波以及控制波長位置的目的，本論文利用金屬/介電質之間電場分量不連續所產生之表面電漿效應，並結合光子晶體結構，使得光具有方向性，有助於光耦合至表面電漿模態，達到濾波以及選擇波長之效果。本論文使用SOI基板，以實現元件之電阻加熱及相關微結構，並用軟體模擬材料以及孔洞週期結構變化對於發光波長之影響，設計出波長位置在7.2 μm、9.2 μm、11.2 μm之發光元件結構。並藉由離子擴散的方式增加元件之導電率，設計元件之長寬比，分別為3.8×1.7 mm2、4.8×1.7 mm2、5.8×1.7 mm2的元件，經計算及四點探針測量後其電阻值分別約為116 Ω、92 Ω、76 Ω，其加熱溫度經熱電偶量測均可到達240 ℃以上，發光功率經紅外光檢光器量測可達1.13 mW，而波長變化情形，我們利用FTIR 之量測結果可以發現在不同孔洞週期下，量測波長也會隨之改變，本論文中之量測波長可從7.4 μm變化到8.3 μm，由此可以證實不同孔洞週期會改變發光波長。

For the applications in infrared therapy, this thesis focuses on
developing infrared thermal emitter devices, whose wavelength ranges
from 4~12 μm. In order to select and control wavelength, we utilize the
surface plasma induced by abrupt junction between a metal layer and a
dielectric layer. Photonic crystals are also adopted to make light output
directive, and enhance the surface plasmonic effect. After simulating the
effect on wavelength by varying the material and hole period, we design
emitters whose wavelengths are 7.2 μm, 9.2 μm, 11.2 μm, respectively.
We fabricate the thermal emitters on a SOI substrate that is favorable
for realizing the heating elements and simplifying the related process.
The top silicon layer of the SOI wafer is undoped, so ion diffusion is
carried out to increase the conductivity. The measured resistance by four
point probe for device sizes of 3.8×1.7 mm2 , 4.8×1.7 mm2 , and
5.8×1.7 mm2 is 116 Ω, 92 Ω, and 76 Ω, respectively. The surface
temperature measured by thermocouple can be up to 240 ℃ and the
emitted power measured by infrared photodiode can reach 1.13 mW. The
emitted light spectrum is measured with FTIR. The wavelength can
change with the hole period, from 7.2 μm to 8.3 μm. Therefore, we
successfully realized the infrared emitters of which the wavelength can be
controlled by the hole period of the photonic crystals.

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