二維 (2D) 過渡金屬二硫屬化物 (TMDs) 已成為下一代納米電子學的有希望的候選者。然而，二維TMDs材料的大面積、高質量和優異穩定性的生長仍然是一個很大的挑戰。在這項工作中，我們提出了一種單步電感耦合電漿增強化學氣相沉積 (ICPECVD) 系統來製備二維單層 WS2。硫(S)和三氧化鎢(WO3)粉末用作 WS2 生長的固態源。PL 與拉曼技術確定ICPECVD合成之單層 WS2 的品質提高，載流子濃度上升。XPS技術用於分析生成物的元素組成，顯示合成單層WS2晶體的純度提高。TEM技術用於直觀地觀察電漿對於材料合成之晶體原子排列結構的影響。在這裡，我們提出了電漿下WS2單層膜的氣相沉積過程，並且重點考察ICPECVD製程中不同於一般CVD法的成長理論。
電漿的高活性極大促進合成反應的進行，我們成功在2" 藍寶石晶圓上成長WS2，並用拉曼技術確定其為單層均一的薄膜。並且在5*13 cm2的基板上沉積WS2薄膜，這是氣相合成法成長WS2薄膜中目前報道的最大尺寸。
然而，由於硫的離子化和電漿的蝕刻效應，過大的固態源蒸發量與電漿範圍會極大地抑制 WS2 在基材上的外延生長。這項工作為已建立的氣象合成技術提供了另一種途徑，並展示了 ICPECVD系統製備單層 WS2 薄膜的重要見解，有利於未來 2D 材料的應用與發展。

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have become promising candidates for next-generation nanoelectronics. However, the growth of large area, high quality and excellent stability for 2D TMDs materials remains a big challenge. In this work, we present a single-step inductively coupled plasma-enhanced chemical vapor deposition (ICPECVD) system to synthesize the 2D monolayer WS2. S and WO3 powders were used as precursors for WS2 growth. The PL technique is used to identify the quality improvement of the monolayer WS2 film. The high activity of the inductively coupled plasma promotes the growth of the synthesis reaction. Therefore, the 5*13cm2 WS2 thin film was successfully synthesized, which is currently the uniform and largest area deposition reported by vapor phase technology. This work provides an efficient technique for enhancing the high quality monolayer WS2 film in large area by the ICPECVD, which is beneficial for future researches and applications in 2D materials.

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