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    1
    Analyzing the Data Erasure Algorithms from the Design of Flash Translation Layers
    • Department of Electronic and Computer Engineering /106/ Master
    • Author: Po-Ling Lin   Advisor: Chin-Hsien Wu
    • Recently, NAND flash memory has been widely used in cell phones because of its small size, non-vola…
    • Clicks: 489  Downloads: 4 
    • Full text public date 2022/08/14 (Intranet public)
    • Full text public date This full text is not authorized to be published. (Internet public)
    • Full text public date This full text is not authorized to be published. (National library)

    2
    An Idle Time Detection Strategy based on the Martingale and Anti Martingale Models for Storage Systems

    3
    A Global and Local DRAM Allocation Strategy for Solid-State Drives (SSDs)

    4
    A Multi-Stream-aware DRAM Allocation Strategy inside Solid-State Drives (SSDs)

    5
    Exploiting Multi-controller Parallelism for Solid-State Drives

    6
    A Multi-Channel Management Scheme Optimized for Read Throughput

    7
    Set-Based Management Scheme for MLC Flash Memory

    8
    An Open-System Framework for Flash-Memory Storage Systems
    • Department of Computer Science and Information Engineering /98/ Master
    • Author: Shang-Yang Chang   Advisor: Jen-Wei Hsieh
    • 由於輕便、抗震、存取快速、低耗電以及高密度等特性，快閃記憶體廣泛地被用在消費性電子產品及手持裝置上。快閃記憶體可分成單階儲存單元和多階儲存單元兩種。前者是早期的快閃記憶體設計，每一個儲存單元可儲存一…
    • Clicks: 541  Downloads: 10 

    9
    A Novel Pseudo SLC for Dual-Mode Flash Memory
    • Department of Computer Science and Information Engineering /109/ Master
    • Author: ZHI-XIANG LU   Advisor: Jen-Wei Hsieh
    • In order to increase the overall performance of MLC flash memory, some MLC blocks in the SSD will b…
    • Clicks: 361  Downloads: 0 
    • Full text public date 2025/12/03 (Intranet public)
    • Full text public date This full text is not authorized to be published. (Internet public)
    • Full text public date This full text is not authorized to be published. (National library)

    10
    RDER: Using Read Disturbance to Enhance the Reliability of 3D-TLC NAND Flash Memory
    • Department of Computer Science and Information Engineering /109/ Master
    • Author: Shih-Han Lai   Advisor: Jen-Wei Hsieh
    • Disturbance error and retention time error are two main types of errors in 3D-TLC flash memory. As …
    • Clicks: 490  Downloads: 0 
    • Full text public date 2025/11/19 (Intranet public)
    • Full text public date This full text is not authorized to be published. (Internet public)
    • Full text public date This full text is not authorized to be published. (National library)
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