研究生: |
李佾修 Yi-Siou Li |
---|---|
論文名稱: |
混合高分子犧牲層轉印氧化銦錫薄膜於透明有機電子元件之研究 Study of Polymer Blends Sacrificial Layer for Transferable ITO Thin Film on Transparent Organic Electronics |
指導教授: |
戴龑
Yian Tai |
口試委員: |
黃柏仁
Bohr-Ran Huang 王澤元 Tse-Yuan Wang |
學位類別: |
碩士 Master |
系所名稱: |
工程學院 - 化學工程系 Department of Chemical Engineering |
論文出版年: | 2018 |
畢業學年度: | 106 |
語文別: | 中文 |
論文頁數: | 80 |
中文關鍵詞: | 氧化銦錫 、轉印法 、聚苯乙烯磺酸鈉 、聚乙烯吡咯烷酮 |
外文關鍵詞: | Indium tin oxide, Transfer method, Polystyrene sulfonate(PSS), Polyvinyl pyrrolidone(PVP) |
相關次數: | 點閱:493 下載:1 |
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本研究在於改良薄膜轉印法之犧牲層,利用射頻磁控濺鍍氧化銦錫(ITO)薄膜於犧牲層基板上,並藉由轉印法將ITO薄膜轉印至有機光電元件的高分子主動層上,可得到可見光透明薄膜電晶體,亦可避免濺鍍過程及退火過程對高分子層的傷害。將polystyrene sulfonate (PSS) 用作犧牲層在轉印時能使ITO與玻璃基板分離,然而在薄膜 (100nm) 尺度下,ITO容易在轉印過程中碎裂。本研究發現將少量polyvinyl pyrrolidone (PVP) 摻入PSS犧牲層中,在轉印的同時能保有ITO薄膜的完整度及電性。接著藉由調整不同比例的PSS:PVP犧牲層以及不同退火溫度,並利用撈膜轉印法,做轉印前與轉印後的成功率及電性的比較。本研究將簡單探討犧牲層的機制,並嘗試利用二次轉印法去除殘留層。最後利用兩種轉印法將ITO轉印至薄膜電晶體元件上作為電極,其特性與鋁電極薄膜電晶體相比有更高的開關比、更低的漏電流及極佳的透明度。
Indium tin oxide (ITO) is the most widely used material for transparent electrode due to its high electrical conductivity and optical transparency. Generally, high quality ITO films are fabricated by magnetron sputtering method. However, sputtering and annealing are harmful when deposit ITO on organic or polymer thin film.
A non-destructive, transfer approach method to fabricate ITO thin film on another substrate was reported. Polystyrene sulfonate (PSS) is used as the sacrificial layer for its high water-solubility. However, ITO is easily broken during the transfer process. Therefore, a small amount of polyvinyl pyrrolidone (PVP) is added into the PSS sacrificial layer and successfully maintained the integrity of the ITO film after transferred.
In this research, I optimize the ITO quality by tuning different ratio of PSS:PVP sacrificial layer and different annealing temperature. Next, using different ratios of PSS:PVP and annealing temperature, transferring thin film by “free-standing transfer method”, and take comparison of film quality before and after transfer method. Furthermore, I discuss about the mechanism of sacrificial layer and report another transfer method called “secondary transfer method” and trying remove the residual layer. Finally, the ITO was transferred to the organic thin film transistor (OTFT) as an electrode by transfer method, which has higher on/off ratio, lower leakage current and excellent transparency, in comparison of the aluminum electrode thin film transistor.
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