本研究旨在利用馬達扭矩量測系統於拋光製程中監測機台的扭矩訊號變化，以確保圖案化晶圓能夠更準確地停止於製程終點，最後建立一套適用於矽導微孔化學機械拋光(Trench Silicon via chemical mechanical polishing, TSV CMP)之終點偵測系統，達成圖案化晶圓於精拋後之表面粗糙度(Ra)小於5 nm，以及平均凹陷階高小於10 nm的製程目標。實驗將分為三個部分進行：第一部分，使用軟式複合墊搭配鹼性拋光液(D3586)分別對奈米雙晶銅與二氧化矽薄膜晶圓進行拋光實驗，透過拋光後之晶圓表面品質及選擇比分析的結果，為奈米雙晶銅圖案化晶圓選擇最合適的精拋參數，選用下壓力2 psi搭配轉速60/50 rpm的參數可獲得最佳的晶圓表面粗糙度改進率，奈米雙晶銅及二氧化矽薄膜晶圓的晶圓表面粗糙度改進率分別為15.76 %與18.03 %，以及較低的拋光選擇比0.47。第二部分，使用軟式複合墊搭配酸性拋光液(C8902)對奈米雙晶銅薄膜晶圓進行拋光實驗，為奈米雙晶銅圖案化晶圓選擇最合適的粗拋參數，選用下壓力3 psi搭配轉速60/50 rpm的參數可獲得最高的晶圓材料移除率1195.59 nm/min以及較佳的晶圓表面粗糙度改進率38.38%，並透過馬達扭矩量測系統觀察拋光製程中的扭矩訊號變化，分析過拋時間，並針對材料移除計算之終點與馬達扭矩訊號分析之終點進行驗證，以判別粗拋結束的時間點。第三部分，針對12吋奈米雙晶銅圖案化晶圓進行粗拋及精拋，藉由馬達扭矩訊號之變化分析粗拋製程終點，再藉由圖案化晶圓上不同材料之面積比計算材料移除體積，進而得出精拋的製程時間，以控制晶圓之凹陷階高，精拋後的奈米雙晶銅圖案化晶圓平均表面粗糙度(Ra)為2.33 nm，平均凹陷深度為6.99 nm，結果證實透過拋光參數與凹陷階高的控制得以符合最終的製程目標，未來可將其應用於矽導微孔化學機械拋光製程中，以提升整體的製程效率。

This study aims to utilize a motor torque measurement system to establish endpoint detection during trench silicon via chemical mechanical polishing (TSV CMP) process, ensuring that TSV pattern wafers stop more accurately at specific dishing depth. The target is to develop a TSV CMP process, achieving a fine polishing surface roughness (Ra) of less than 5 nm and an average dishing depth less than 10 nm. Experiment consists of three parts. First, using a soft composite pad with an alkaline slurry (D3586), the optimal parameters in surface roughness improvement of 15.76% for nano-twinned copper and 18.03% for silicon dioxide, with a selectivity of 0.47. Second, using a soft composite pad with an acidic slurry (C8902), the optimal parameters for nano-twinned copper blanket wafers achieve the highest material removal rate (MRR) of 1195.59 nm/min and a surface roughness improvement rate of 38.38%. Torque signal variations during polishing are analyzed to determine the rough polishing endpoint. Finally, for 12-inch nano-twinned copper pattern wafers, both rough and fine polishing are performed. The endpoint of the rough polishing process is determined by analyzing the variations in motor torque signals. Subsequently, the material removal volume is calculated based on the area ratios of different materials on the pattern wafer. This calculation is then used to determine the endpoint of the fine polishing process, to control the dishing of nano-twinned copper patterned wafers. Results have achieved a surface roughness of 2.33 nm and dishing depth of 6.99 nm after fine polishing, demonstrating that by controlling the parameters and dishing, the final target is achieved. In the future, it can be used in the TSV CMP process to enhance the process efficiency.

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