|
A. 英文參考文獻 A-1. 期刊、論文及研討會 Akinaga, H. and H. Shima, Resistive Random Access Memory (ReRAM) Based on Metal Oxides. Proceedings of the IEEE. 98(12): p. 2237-2251. Baek, I.G., et al. Highly scalable nonvolatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses. in Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International. 2004. ChiaHua, H., et al. Threshold Vacuum Switch (TVS) on 3D-stackable and 4F2 cross-point bipolar and unipolar resistive random access memory. in Electron Devices Meeting (IEDM), 2012 IEEE International. Chien, W.C., et al. A forming-free WOx resistive memory using a novel self-aligned field enhancement feature with excellent reliability and scalability. in Electron Devices Meeting (IEDM), 2010 IEEE International. Chua, L.O., Memristor-The missing circuit element. Circuit Theory, IEEE Transactions on, 1971. 18(5): p. 507-519. Flocke, A., et al. A Fundamental Analysis of Nano-Crossbars with Non-Linear Switching Materials and its Impact on TiO2 as a Resistive Layer. in Nanotechnology, 2008. NANO '08. 8th IEEE Conference on. 2008. Fortunato, E., P. Barquinha, and R. Martins, Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances. Advanced Materials. 24(22): p. 2945-2986. Graves-Abe, T. and J.C. Sturm, Programmable organic thin-film devices with extremely high current densities. Applied Physics Letters, 2005. 87(13): p. 133502-133502-3. Hideo Sunami, B.S., The Role of the Trench Capacitor in DRAM Innovation. Solid-State Circuits Society Newsletter, IEEE, 2008. 13(1): p. 42-44. Jaeyun, Y., et al. Highly reliable and fast nonvolatile hybrid switching ReRAM memory using thin Al2O3 demonstrated at 54nm memory array. in VLSI Technology (VLSIT), 2011 Symposium on. Ji, Z., et al. A 3D RRAM using stackable 1TXR memory cell for high density application. in Communications, Circuits and Systems, 2009. ICCCAS 2009. International Conference on. 2009. Kim, M.J., et al. Low power operating bipolar TMO ReRAM for sub 10 nm era. in Electron Devices Meeting (IEDM), 2010 IEEE International. Lee, A.R., et al., Complementary resistive switching mechanism in Ti-based triple TiOx/TiN/TiOx and TiOx/TiOxNy/TiOx matrix. Applied Surface Science. 274(0): p. 85-88. Lee, H.Y., et al. Evidence and solution of over-RESET problem for HfOX based resistive memory with sub-ns switching speed and high endurance. in Electron Devices Meeting (IEDM), 2010 IEEE International. Lee, M.-J., et al., A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5?/TaO2? bilayer structures. Nat Mater. 10(8): p. 625-630. Lewis, D.L. and H.H.S. Lee. Architectural evaluation of 3D stacked RRAM caches. in 3D System Integration, 2009. 3DIC 2009. IEEE International Conference on. 2009. Makarov, A., V. Sverdlov, and S. Selberherr. New trends in microelectronics: Towards an ultimate memory concept. in Devices, Circuits and Systems (ICCDCS), 2012 8th International Caribbean Conference on. Mutsuko, H. and D. Redinger. Session 4: Displays, sensors, and MEMS --thin-film devices and memory. in Electron Devices Meeting, 2008. IEDM 2008. IEEE International. 2008. Otsuka, W., et al. A 4Mb conductive-bridge resistive memory with 2.3GB/s read-throughput and 216MB/s program-throughput. in Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2011 IEEE International. Rahaman, S.Z., et al. Low current and voltage resistive switching memory device using novel Cu/Ta2O5/W structure. in VLSI Technology, Systems, and Applications, 2009. VLSI-TSA '09. International Symposium on. 2009. Rowe, L.K., et al., CMOS-compatible optical rib waveguides defined by local oxidation of silicon. Electronics Letters, 2007. 43(7): p. 392-393. SangBum, K. and C.H. Lam. Transition of memory technologies. in VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on. Seo, S. and J. Gautier. Solid-State and Nanoelectronic Devices - Emerging Resistive RAM and New Function On Silicon. in Electron Devices Meeting, 2007. IEDM 2007. IEEE International. 2007. Shyh-Shyuan, S., et al. A 4Mb embedded SLC resistive-RAM macro with 7.2ns read-write random -access time and 160ns MLC-access capability. in Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2011 IEEE International. Strukov, D.B., et al., The missing memristor found. Nature, 2008. 453(7191): p. 80-83. Sunami, H. Development of three-dimensional MOS structures from trench-capacitor DRAM cell to pillar-type transistor. in Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on. 2008. Sungjoo, H. Memory technology trend and future challenges. in Electron Devices Meeting (IEDM), 2010 IEEE International. Terai, M., et al. Effect of bottom electrode of ReRAM with Ta2O5/TiO2 stack on RTN and retention. in Electron Devices Meeting (IEDM), 2009 IEEE International. 2009. Thakar, G.V., et al. High performance 0.3 /spl mu/m CMOS using I-line lithography and BARC. in VLSI Technology, 1995. Digest of Technical Papers. 1995 Symposium on. 1995. Tsunoda, K., et al. Low Power and High Speed Switching of Ti-doped NiO ReRAM under the Unipolar Voltage Source of less than 3 V. in Electron Devices Meeting, 2007. IEDM 2007. IEEE International. 2007. Wei, Z., et al. Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism. in Electron Devices Meeting, 2008. IEDM 2008. IEEE International. 2008. Yu-Chih, H., L. Huan-Min, and C. Huang-Chung. Superior resistive switching characteristics of Cu-TiO2 based RRAM cell. in Nanoelectronics Conference (INEC), 2013 IEEE 5th International. Zhang, F.F., et al. Rectifying characteristics and implementation of n-Si/HfO2 based devices for 1D1R-based cross-bar memory array. in Silicon Nanoelectronics Workshop (SNW), 2012 IEEE. Zhuang, W.W., et al. Novel colossal magnetoresistive thin film nonvolatile resistance random access memory (RRAM). in Electron Devices Meeting, 2002. IEDM '02. International. 2002.
A-2. 網頁參考資料 Elpida, Sharp Team Up on Resistive RAM - A Full Blown Memory Initiative? (http://www.brightsideofnews.com/news/2010/10/17/elpida2c-sharp-team-up-on-resistive-ram---a-full-blown-memory-initiative.aspx) Fighting words: Apple's 'Post-PC' and Microsoft's 'PC Plus' were never that different (http://www.theverge.com/apple/2012/7/12/3151491/fighting-words-apple-post-pc-microsoft-pc-plus) Nanoelectronic Memristor/RRAM Devices for High Density Logic and Memory Applications (www.eng.utoledo.edu/eecs/faculty_web/~rjha/research_projectsNew.html) Panasonic AM microcomputer series provides high-performance embedded controllers optimized for applications, mainly in sensor, power, and automotive fields. (http://www.semicon.panasonic.co.jp/en/products/microcomputers/) Resistance-switching memory (http://cmsl.snu.ac.kr/?mid=ReRAM2)
Samsung Develops Memory Cell for Large-capacity 3D ReRAM (http://techon.nikkeibp.co.jp/english/NEWS_EN/20121213/256171/)
B. 中文參考文獻 B-1. 書籍 拓墣產業研究所(民96)。韓國次世代非揮發性記憶體發展現況與策略。台北市:拓墣科技 拓墣產業研究所(民99)。全球記憶體元件應用市場與趨勢分析。台北市:拓墣科技。 陳達仁(民98)。專利資訊檢索、分析與策略。台北市:華泰文化。 曾智超(民101)。台灣DRAM產業的未來走向。台北市:財團法人國家政策研究基金會。 B-2. 論文 何威霆, 釩摻雜鋯酸鍶基記憶體元件之電阻轉換特性, 電機工程學系. 2009, 國立東華大學: 花蓮縣. p. 99. 李明道, (鎳、鈦與鎢)氧化物之電性及應用於電阻式隨機記憶體研究, 材料科學與工程學系, 國立交通大學: 新竹市. p. 115. 許欽雄, 雙圖案微影技術之晶片設計方法, in 電子工程學研究所, 臺灣大學: 台北市. p. 149. 連志銘, 以熱氧化法製備氧化銅薄膜及探討微結構與光學性質, 化學工程系碩士班. 2008, 國立高雄應用科技大學: 高雄市. p. 76. 陳建熹, 二氧化鉿─二氧化鈦複合薄膜於非揮發性電阻式記憶體之特性研究, 材料科學工程學系. 2009, 國立清華大學: 新竹市. p. 70. 黃薰瑩, 熱處理及下電極材料對五氧化二鉭電容器之特性影響, 材料科學及工程學系碩博士班. 2002, 國立成功大學: 台南市. p. 107.
B-3. 網頁 2012年NAND型快閃記憶體將超越DRAM產值 (http://cdnet.stpi.narl.org.tw/techroom/market/eeic/2012/eeic_12_012.htm) 9奈米超節能記憶體技術發表會 (http://www.ndl.org.tw/web/news/9nmNews.php) TrendForce:供貨緊縮與備貨需求,八月上旬NAND Flash合約價持續走穩 (http://press.trendforce.com/tw/node/4367) 全球記憶體產品市場發展現況與預測 (http://edm.itri.org.tw/enews/epaper/10012/d01.htm) 松下計劃2012年量產ReRAM,將首先配備於MCU(Microcontroller unit) (http://www.moneydj.com/kmdj/bookmark/bookmarkviewer.aspx?keyid=dac37df9-243e-4a9c-a96f-3a1d0a92e72e) 茂德科技重整期間相關公告 (http://promosst.promos.com.tw/AP/BBS/Regorg.NSF/0/1AEC9BC017902BCA48257A8B0026A890) 憶阻器技術準備邁向商業化 (http://www.eettaiwan.com/ART_8800618753_628626_NT_53d11df2.HTM) |