本論文使用了UMC 90nm 1P9M CMOS及TSMC 0.18μm 1P6M CMOS製程研究並實作了三種振盪器電路。
第一個電路為振盪頻率7.5~11.5GHz，使用變壓器做為LC共振腔之寬頻帶壓控振盪器，利用變壓器共振腔及透過電壓控制改變MOS電容與電容陣列之電容值將能夠設計出振盪在不同頻帶之高、低頻模式。第二個電路為振盪頻率5 GHz，利用變壓器回授及米勒電容兩種技術之壓控振盪器，利用變壓器取代傳統LC共振腔中之電感將能夠得到更加之品質因數，利用米勒效應使得等效的總電容值增加，增加壓控振盪器的頻率可調範圍。第三個電路為振盪頻率10 GHz，利用電晶體差動耦合對結合兩個單端的考畢子差動振盪器，並且不需額外的偏壓電路，避免了偏壓電路對振盪器效能的影響。

This thesis presents three voltage controlled oscillators designed and manufactured by using UMC 90nm 1P9M CMOS technology and TSMC 0.18μm 1P6M CMOS technology.
The first circuit design is a 7.5~11.5 GHz voltage controlled oscillator (VCO) using a transformer as the inductor in LC tank. By using transformer resonant and tuning the control voltage to change the capacitance of varactors and capacitor arrays, the transformer resonant VCO could have two mode of different frequency. The second circuit design is a 5 GHz VCO combined with two technique, transformer feedback and Miller capacitor. By using transformer feedback, the quality factor of transformer resonator will better than traditional LC tank. The Miller capacitor is a Miller-theorem-based capacitor. The Miller capacitor is composed of an amplifier and a varactor. The equivalent Miller capacitance will changed with the gain of amplifier, therefore the VCO could extend the frequency tuning range. The third circuit design is a 10 GHz VCO which consist of two single-ended Colpitts oscillators. The two single-ended Colpitts oscillators are coupled by a pair of cross-coupled NMOS transistors. The cross-coupled transistors provide current sources for the Colpitts oscillators to sustain oscillation without using a bias circuit.

CH1
[1] Anritsu company Inc., Must-Have Reference for Wireless Communication, March, 2005.
[2] IEEE std. 802.11-2007, “IEEE Standard for Information technology - Telecommunications and information exchange between systems - Local and metropolitan area networks - Specific requirements - Part 11: wireless LAN Medium Access Control (MAC) and Physical Layer (PHY) specifications: high-speed physical layer in the 5 GHz band,” September 1999.
[3] Boon, C.C.; Do, M.A.; Yeo, K.S.; Ma, J.G.; Zhang, X.L ,“RF CMOS Low-Phase-Noise LC Oscillator Through Memory Reduction Tail transistor” ,Circuits and Systems II: Express Briefs,IEEE Transactions on Volume 51, Issue 2, Feb 2004 Page(s):85 - 90
[4] X. Yu, Y. Sun, W. Rhee, Z. Wang, H. Ahn, and B. Park “A ΔΣ Fractional-N Synthesizer with Customized Noise Shaping for WCDMA/HSDPA Applications,” Proc. CICC, pp. 753-756, Sept 2008.
[5] Kazuma Ohashi, Yuka Kobayashi, Hiroyuki Ito, Kenichi Okada, Hideki Hatakeyama, Takuya Aizawa, Tatsuya Ito, Ryozo Yamauchi and Kazuya Maus, “A Low Phase Noise LC-VCO with a High-Q Inductor Fabricated by Wafer Level Package Technology,” IEEE Radio Frequency Integrated Circuits Symposium, 2008.
[6] J.Chang, A. Abidi, and M. Gaitan, ”Large suspended inductors on silicon and their use in a 2-μm CMOS RF amplifier,” IEEE Electron Device Letters, vol. 14, PP.246-248, May, 1993.
[7] J. Rabaey, J. Ammer, T. Karalar, S. Li, B. Otis, M. Sheets, and T.Tuan, “PicoRadios for wireless sensor networks: the next challenge in ultra-low power design,” in IEEE Int. Solid-State Circuits Conf.(ISSCC) Dig. Tech. Papers, Feb. 2002, pp. 200–201.
[8] P. Baltus et al., “A 3.5-mW, 2.5-GHz diversity receiver and a 1.2-mW,3.6-GHz VCO in silicon on anything,” IEEE J. Solid-State Circuits, vol. 33, no. 12, pp. 2074–2079, Dec. 1998.
[9] M. Straayer, J. Cabanillas, and G. Rebeiz, “A low-noise transformer-based 1.7GHz CMOS VCO,” IEEE International Solid-state Circuits Conference, February. 2002, pp. 286-287.

CH2
[1] Andrea Bevilacqua, Federico P. Pavan, Christoph Sander, Andrea Gerosa and Andera Neviani, “A 3.4-7GHz transformer-based dual-mode wideband vco,” IEEE Solid-state Circuits Conference, Sept, 2006.
[2] KaChun Kwok and John R. Long, “Analysis of multi-port transformer in vco resonator design,” Delft Institute of microelectronics and Submicrontechnology, Delft University of Technology.
[3] C. Yue and S. Wong, “Physical modeling of spiral inductors on silicon,” IEEE Transactions on Electron Devices, vol. 47, pp. 560-568, March, 2000.
[4] N. M. Nguyen and R. G. Meyer, “Start-up and frequency stability in high-frequency oscillators,” IEEE Journal of Solid-state Circuits, vol. 27, no. 5, pp. 810-820, 1992.
[5] O. Takashi, “Rigorous Q-factor formulation for one- and two-port passive linear Networks from an oscillator noise spectrum viewpoint,” IEEE Transactions on Circuits and Systems-II: Express Briefs, vol. 52,no. 12, pp. 846-850, 2005.
[6] KaChun Kwok and Howard C. Luong, “Ultra-low-voltage high-performance cmos vcos using transformer feedback,” IEEE Journal of Solid-state Circuits, vol. 40,no. 3, March, 2005.
[7] D. Ham, and A. Hajimiri, ”Concepts and methods in optimization of integrated LC VCOs,” IEEE Journal of Solid-State Circuits, Vol. 36, Issue 6, pp. 896-909, June, 2001.
[8] A. D. Berny, A. M. Niknejad, and R. G. Meyer, “A 1.8-GHz LC VCO with 1.3-GHz tuning range and digital amplitude calibration,” IEEE Journal of Solid-State Circuits, vol. 40, no. 4, pp. 909–917, 2005.
[9] N. H. W. Fong, J.-O. Plouchart, N. Zamdmer, D. Liu, L. F. Wagner,C. Plett, and N. G. Tarr, “Design of wide-band CMOS VCO formultiband wireless LAN applications,” IEEE Journal of Solid-State Circuits, vol. 38, no. 8, pp. 1333–1341, 2003.
[10] M. Tiebout, “A CMOS fully integrated 1 GHz and 2 GHz dual band VCO with a voltage controlled inductor,” in Proceedings of the IEEE European Solid-State Circuits Conference, 2002, pp. 799–802.

CH3
[1] D. B. Leeson, “A simple model of feedback oscillator noise spectrum,”Proc. IEEE, vol. 54, no. 2, pp. 329–330, Feb. 1966.
[2] Behzad Razavi, “RF Microelectronic,” Prentice Hall PTR, 1998
[3] Maarten Lont, Reza Mahmoudi,, Edwin van der Heijden, Anton de Graauw, Pooyan Sakian, Peter Baltus, Arthur van Roermund, “A 60GHz Miller Effect Based VCO in 65nm CMOS with 10.5% Tuning Range”, IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 9-12, 2009.
[4] KaChun Kwok and Howard C. Loung, “Ultra-Low-Voltage High-Performance CMOS VCOs Using Transformer Feedback”, IEEE journal of Solid-State Circuits, vol. 40, NO. 3, March 2005
[5] Kari Stadius, Risto Kaunisto and Veikko Porra,”Varactor Diodeless Harmonic VCOs For GHz-Range Applicatons,” ICECS, vol. 1, pp.505-508, Sept 1999.
[6] Chi-Kai Hsieh, Kun-Yao Kao, Jeffrey Ronald Tseng, and Kun-You Lin, “A K-band CMOS low power modified Colpitts VCO using transformer feedback,” IEEE MTT-S Int. Microw. Symp. Dig., pp. 1293-1296, Boston, Jun. 2009.

CH4
[1] C.-Y. Cha and S.-G. Lee, “A complementary Colpitts oscillator in CMOS technology,” IEEE Trans. Microw. Theory Tech., vol. 53, no. 3, pp. 881–887, Mar. 2005.
[2] C. F. Lee, S. L. Jang, and M. H. Juang, “A wide locking range differential colpitts injection locked frequency dividers,” IEEE Microwave Wireless Component Letters, vol. 17, no. 11, pp. 790-792, Nov. 2007.
[3] L. Jia, J.-G. Ma, K. S. Yeo, and M. A. Do, “9.3-10.4-GHz-band cross-coupled complementary oscillator with low phase-noise performance,” IEEE Trans, Microwave Theory Tech., vol. 52, pp. 1273-1278, April 2004.
[4] Bavisi, J. Comeau, J. Cressler, M. Swaminathan, and M. Lam, “A 9 GHz, 5 mW VCO using lumped-element transformer feedback in 150 GHz f/sub T/ SiGe HBT technology,” in Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on, 18-20 2006, p. 4 pp.