研究生: |
葉婷 Ting - Ye |
---|---|
論文名稱: |
應用於無線感測器之逐次逼近式低電壓類比數位轉換器晶片設計 The 10-bit 2-MS/s Low Voltage SAR ADC Chip Design for Wireless Sensor Applications |
指導教授: |
劉榮宜
Ron-Yi Liu 黃進芳 Jhin-Fang Huang |
口試委員: |
徐敬文
Ching-Wen Hsue 江正雄 Jen-Shiun Chiang 張勝良 Sheng-Lyang Jang |
學位類別: |
碩士 Master |
系所名稱: |
電資學院 - 電子工程系 Department of Electronic and Computer Engineering |
論文出版年: | 2012 |
畢業學年度: | 100 |
語文別: | 英文 |
論文頁數: | 87 |
中文關鍵詞: | 低電壓 、逐次逼近式類比數位轉換器 、時間交錯式 |
外文關鍵詞: | time-interleaved, SAR ADC, low voltage |
相關次數: | 點閱:310 下載:12 |
分享至: |
查詢本校圖書館目錄 查詢臺灣博碩士論文知識加值系統 勘誤回報 |
本論文中討論以TSMC 1P6M 0.18 μm CMOS製程,實現一個十位元、每秒兩百萬次取樣時間之逐漸逼近式類比數位轉換器,以及90 nm 八位元、每秒八千萬次取樣頻率之時間交錯技術逐漸逼近式類比數位轉換器。十位元類比數位轉換器中的數位類比轉換器為了有較高的準確度,使用二進位加權電容陣列。取樣保持電路包含靴帶式電路以提升電路效能。兩級的動態比較器有較佳的電壓偏移,以及不需額外偏壓電路,可節省功率消耗。此外,十位元類比數位轉換器時脈訊號為取樣頻率的20倍,八位元類比數位轉換器時脈訊號即為取樣頻率。
經由HSPICE和SpectreRF輔助設計軟體驗證結果,0.18 μm十位元以及90 nm 八位元逐漸逼近式類比數位轉換器被實現,其中下線的十位元晶片有量測結果。在供應電壓為1 伏特下,量測差分非線性度及積分非線性度為 0.97 LSB和2.23 LSB。當輸入訊號為200 kHz下,其量測所得有效位元為8.12-bit,本晶片面積包含ESD PADs為0.7 mm2,整體電路功率消耗為126 μW。
In this thesis, a 10-bit 2-MS/s Successive Approximation Register analog-to-digital converter (SAR ADC) implemented in TSMC double-poly six metal (1P6M) 0.18-μm CMOS technology and a 90 nm 8-bit 80-MS/s time-interleaved (TI) SAR ADC are introduced. The digital-to-analog converter (DAC) of the 10-bit SAR ADC is accomplished by charge redistribution binary weighted capacitor array based on its accuracy. The track-and-hold (T/H) circuit includes bootstrapped circuit improving T/H performance. The comparator structure is a two-stage dynamic comparator which helps reduce offset voltage and has no external biasing voltage so that low power consumption is achieved. For the 10-bit ADC, an external frequency which is 20 times the frequency of the 2 MHz sampling rate is needed. For the 8-bit TI SAR ADC, the clock frequency is the sampling rate.
The SAR ADCs are simulated by HSPICE and SpectreRF. The 10-bit ADC is taped out by TSMC excluding the 8-bit 90 nm ADC. The measurement results of differential and integral nonlinearity of the 10-bit ADC are within 0.97/-0.86 LSB (Least Significant Bit) and 1.63/-2.23 LSB respectively at full sampling rate. The measurement results show effective number of bit (ENOB) of 8.12-bit with sampling frequency of 2 MHz at input frequency close to 200k Hz. The chip area including ESD (electrostatic discharge) pads is 0.7 mm2. Power consumption of this ADC is 126 μW with 1 V supply voltage.
[1] B. Murmann. (2010, June) ADC performance survey 1997 - 2010. [Online]. Available: http://www.stanford.edu/˜murmann/adcsurvey.html
[2] N. Verma and A. P. Chandrakasan,“An Ultra Low Energy 12-bit Rate-Resolution Scalable SAR ADC for Wireless Sensor Nodes,”IEEE J. of Solid-State Circuits, vol. 42, no. 6, pp. 1196-1205, Jun. 2007.
[3] Z. Zeng, C.-S. Dong, and X. Tan,“A 10-bit 1MS/s Low Power SAR ADC for RSSI Application,”IEEE Intl. Conf. on Solid-State and Integrated Circuit Tech., pp. 569-571, Nov. 2010.
[4 ] H. Wu, B. Li, M. Zou, W. Huang, and Y. Wang,“An 1.2 V 8-bit 1-MS/s single-input res-cap segment SAR ADC for temperature sensor in LTE,”Intl. Conf. of Electron Devices and Solid-State Circuits, pp. 1-2, Nov. 2011.
[5] M.Y. Ng,“0.18 μm Low Voltage 12-bit Successive Approximation Register Analog-to-Digital converter ,”Asia Symp. on Quality Electronic Design, pp. 277-281, Jul. 2011.
[6] H. W. Chen, Y. H. Liu, Y. H. Lin, and H. S. Chen,“A 3 mW 12-bit 10 MS/s Sub-range SAR ADC,”IEEE Asian Solid-State Circuits Conf., pp. 153-156, Nov. 2009.
[7] J. J. Kang and M. P. Flynn,“A 12b 11MS/s Successive Approximation ADC with Two Comparators in 0.13μm CMOS,”Symp. on VLSI Circuits, pp. 240-241, Jun. 2009.
[8] H. Kim, Y. Min, Y. Kim, and S. Kim,“A Low Power Consumption 10-bit Rail-to-rail SAR ADC using a C-2C Capacitor Array,”IEEE Intl. Conf. on Electron Devices and Solid-State Circuits, pp. 1-4, Dec. 2008.
[9] D. A. Johns and K. Martin, Analog Integrated Circuit Design, John Wiley & Sons, Inc., 1997.
[10] P. E. Allen and D. R. Holberg, CMOS Analog Circuit Design, 2nd Edition, Oxford University Press, 2002.
[11] M. J. M. Pelgrom, A. C. J. Duinmaijer, and A. P. G. Welbers,“Matching Properties of MOS Transistors,”IEEE J. of Solid-State Circuits, vol. 24, no. 5, pp. 1433- 1439, Oct. 1989.
[12] D. Schinkel, E. Mensink, E. Kiumperink, E. van Tuijl, and B. Nauta,“A Double-Tail Latch-Type Voltage Sense Amplifier with 18ps Setup Hold Time,”IEEE Intl. Solid-State Circuits Conf., Digest of Technical Papers,” pp. 314-605, Feb. 2007.
[13] M. J. McNutt, S. LeMarquis, and J. L. Dunkley,“Systematic Capacitance Matching Errors and Corrective Layout Procedures,”IEEE J. of Solid-State Circuits, vol. 29, no. 5, pp. 611-616, May 1994.
[14] J.-B. Shyu, G. C. Temes, and F. Krummenacher,“Random Error Effects in Matched MOS Capacitors and Current Sources,”IEEE J. of Solid-State Circuits, vol. 19, no. 6, pp. 948- 956, Dec. 1984.
[15] J. E Chen, P. W. Luo, and C. L. Wey,“Placement Optimization for Yield Improvement of Switched-Capacitor Analog Integrated Circuits,”IEEE TCAD, vol. 29, no. 2, pp. 313-318, Feb. 2010.
[16] C. C. Liu, Y. T. Huang, G. Y. Huang, S. J. Chang, C. M. Huang, and C.-H. Huang,“A 6-bit 220-MS/s Time-Interleaving SAR ADC in 0.18-μm Digital CMOS Process,”Intl. Symp. on VLSI-DAT, pp. 215-218, Apr. 2009.
[17] C. C. Liu, S. J. Chang, G. Y. Huang, and Y. Z. Lin,“A 10-bit 50-MS/s SAR ADC With a Monotonic Capacitor Switching Procedure,”IEEE J. of Solid-State Circuits, vol. 45, no. 4, pp. 731-740, Apr. 2010.
[18] Behzad Razavi, Design of Analog CMOS Integrated Circuits, McGraw-Hill Companies, Inc., 2002.
[19] W. Xu and E. G. Friedman,“Clock Feedthrough in CMOS Analog Transmission Gate Switches,”IEEE Intl. ASIC/SOC Conf., pp. 181- 185, Sept. 2002.