本文應用分子靜力學三維準穩態奈米切削模式，進行模擬AFM探針切削單晶矽奈米流道梯形凹槽的偏移循環加工，除了可計算切削力、等效應力與等效應變外，亦可計算被切削單晶矽工件所提升之溫度；進而可進行被切削單晶矽工件的溫度分佈分析。此外本文亦進一步將前述所得被切削單晶矽工件各原子之總提升溫度帶入有限差分熱傳方程式，並將計算出來的空氣及水的熱對流係數值也帶入有限差分熱傳方程式，計算出每一步階奈米級梯形凹槽偏移加工切削中被切削的單晶矽工件之溫度場變化。本文以切削兩道次偏移加工法加工多切削層單晶矽基板奈米流道梯形凹槽，先以固定的切削深度進行單晶矽梯形凹槽之加工，切削完第一切削層之第一切削道次後再以固定偏移量往右偏移切削第二切削道次。本文分為兩種切削加工模式來分析，第一種模式為以任意設定的切削深度來切削第二切削層之第一切削道次，之後再以相同切削深度來偏移切削第二切削道次，分析其下壓力與切削力的變化。第二種模式為固定第一切削層之第一切削道次之下壓力，再應用比下壓能公式與CAD軟體模擬出的切削移除體積計算出所需要的切削深度，再向右偏移完成切削第二切削道次，並以相同模式加工第二切削層及第三切削層的兩個第二切削道次，分析其切削力與下壓力的變化。最後再以比下壓能之理論公式計算所得之切削力及下壓力與前面分子靜力學三維準穩態奈米切削模式模擬所得之切削力與下壓力相比較，驗證模擬結果為合理的。進一步用模擬所得之各原子位移量及切削力和下壓力之值，計算出被切削單晶矽的等效應變及等效應力。本文假設切削模式，被切削單晶矽工件溫度的提升是由塑性變形熱與摩擦熱兩種熱源產生。本文塑性變形熱可由被切削工件單晶矽之等效應力與等效應變之乘積計算出。本文並計算因摩擦熱源產生的溫度提升。本文再將兩種熱源所產生之溫度提升加總計算後，得到被切削單晶矽工件各原子提升之總溫度，再進行溫度場分析。此外本文亦進一步將前述所得被切削單晶矽工件各原子提升之總溫度帶入有限差分熱傳方程式。本文提出應用上表面為發熱的平板熱對流公式與計算步驟，計算出在25℃時的空氣與水的熱對流係數然後將所得之熱對流係數帶入有限差分熱傳方程式，即可計算出每一步階奈米級梯形凹槽偏移加工切削中，被切削的單晶矽工件之切削表面與還沒被切削到的單晶矽表面各原子之溫度場變化。最後再進行分析被切削工件表面受到室溫之水的熱對流及室溫之空氣的熱對流對被切削單晶矽之溫度分佈影響分析。

The paper applies three-dimensional quasi-steady nanocutting model of molecular statics to conduct simulation of offset cycle cutting in cutting of trapezium groove on single-crystal silicon nanochannel by AFM probe. The paper can calculate not only the cutting force, equivalent stress and equivalent strain, but also the temperature rise of the single-crystal silicon workpiece being cut. Furthermore, the temperature distribution of the single-crystal silicon workpiece being cut can be analyzed. Besides, the abovementioned total temperature rise of all atoms of the single-crystal silicon workpiece being cut can be substituted in finite-difference heat conduction equation. The calculated numerical values of thermal convection coefficients of air and water are also substituted in finite-difference heat conduction equation. The paper calculates the change in temperature field of the single-crystal silicon workpiece being cut during each step of offset cutting and cutting of nanoscale trapezium groove. The study employs two-path offset cutting method to cut multilayered trapezium groove on nanochannel of single-crystal silicon substrate. First of all, a fixed cutting depth is cut for cutting of single-crystal silicon trapezium groove. After completion of the first cutting path on the first cutting layer, rightward offset cutting for the second cutting path at a fixed offset amount is made. The paper intends to analyze two cutting models for two-path offset cutting method. For the first model, a randomly set cutting depth is cut for the first cutting path on the second cutting layer. Then the same cutting depth is cut for offset cutting of the second cutting path, and the change in down force and cutting force is analyzed. As to the second model, a fixed down force is applied for the first cutting path on the first cutting layer. Specific down force energy (SDFE) equation and CAD software are used to simulate the removed volume during cutting, and calculate the required cutting depth. After rightward offset is completed, cutting of the second cutting path is completed. The same model is used to cut the second cutting paths on the second cutting layer and the third cutting layer, and the change in cutting force and down force is analyzed. Finally, the cutting force and down force obtained from calculation of the SDFE theoretical equation is compared with the cutting force and down force obtained from simulation of the abovementioned three-dimensional quasi-steady nanocutting model of molecular statics, proving the rationality of the simulation results. Furthermore, using the displaced amount, cutting force and down force of each atom acquired from simulation, the equivalent strain and equivalent stress of single-crystal silicon being cut are calculated. The paper supposes that for the cutting model, the temperature rise of the single-crystal silicon workpiece being cut is caused by two heat sources: plastic deformation heat and friction heat. In the paper the plastic deformation heat can be calculated by multiplying equivalent stress by equivalent strain of the single-crystal silicon workpiece being cut. The paper also calculates the temperature rise caused by friction heat. The paper adds up the temperature rise caused by the two heat sources, and achieves the total temperature rise of all atoms of the single-crystal silicon workpiece being cut, for analysis of temperature field. Besides, the abovementioned total temperature rise of all atoms of the single-crystal silicon workpiece being cut is further substituted in the finite-difference heat conduction equation. The paper proposes applying the thermal convection equation and calculation procedures of the upper surface heating plate, and calculates the thermal convection coefficients of air and water under 25oC. The obtained thermal convection coefficients are substituted in the finite-difference heat conduction equation. Then the paper can calculate the change of temperature field of each atom on the surface of the single-crystal silicon workpiece being cut and on the surface of the single-crystal silicon workpiece not being cut during each step of offset cutting of nanoscale trapezium groove. Finally, the paper analyzes how the thermal convection of water under room temperature affects the surface of the workpiece being cut, and how the thermal convection of air under room temperature affects the temperature distribution of the single-crystal silicon being cut.

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