研究生: |
郭立宇 Li-Yu Kuo |
---|---|
論文名稱: |
CAM-based SRAM內建自我修復電路之設計與驗證 Design and Verification of CAM-based SRAM BISR Circuits |
指導教授: |
吳乾彌
Chen-Mie Wu |
口試委員: |
陳省隆
Hsing-Lung Chen 陳郁堂 Yie-Tarng Chen 陳漢宗 Hann-Tzong Chern |
學位類別: |
碩士 Master |
系所名稱: |
電資學院 - 電子工程系 Department of Electronic and Computer Engineering |
論文出版年: | 2016 |
畢業學年度: | 104 |
語文別: | 中文 |
論文頁數: | 98 |
中文關鍵詞: | 內建自我修復 |
外文關鍵詞: | CAM, BISR |
相關次數: | 點閱:114 下載:7 |
分享至: |
查詢本校圖書館目錄 查詢臺灣博碩士論文知識加值系統 勘誤回報 |
本論文是有關CAM-based SRAM自我修復電路之設計與驗證,相關研究工作包含下列四大部分:
第一部分為探討內建自我修復電路之結構,並在分析內建自我測試與故障植入電路後,發展出一個SRAM內建自我修復電路驗證系統。
第二部分為設計與實現CAM-based SRAM自我修復電路驗證系統之硬體,其中包含了內建自我測試、故障植入與內建自我修復等電路,並以Altera FPGA開發板實現之。
第三部分為驗證系統之軟/硬體整合設計與實現,其中包含撰寫NIOS II相關軟韌體程式來分析由內建自我測試電路所得到的資訊,並使用NIOS II來驗證其功能。
第四部分是使用不同類型的故障來測試與驗證內建自我修復電路之功能。
整體而言,本論文係以研究CAM-based SRAM自我修復電路驗證系統為目標,並使用Altera FPGA開發板實現之。最後,在SRAM上植入不同的故障進行測試,證實本論文所發展之內建自我修復電路有極佳的效能。
This thesis is relevant to the design and verification of an FGPA-based verification system for the CAM-based SRAM BISR (Built-In Self-Repair) circuits. The research work consists of the following four parts.
The first part of the thesis is to explore the architecture of a verification system for the BISR circuits. After analyzing the BIST (Built-In Self-Test) circuits and fault injection methods, a verification system for the CAM-based SRAM BISR circuit has been developed.
The second part of the thesis is to design and implement the hardware for a CAM-based SRAM BISR verification system. It includes the BIST, fault injection, and BISR circuits. Finally, the hardware modules mentioned above are implemented on an Altera FPGA development board.
The third part of the thesis focuses on the hardware/software co-design and implementantion of the verification system. The research work includes writing NIOS II-related software and firmware programs to analyze the fault information generated by the BIST hardware. Meanwhile, NIOS II is used to verify the functionality of the verification system.
The fourth part focuses on using the different kinds of faults to test and verify the function of the BISR circuit.
As a whole, the goal of this thesis is to do the research on a verification system for the CAM-based SRAM BISR system and implement it on an FPGA development board. Finally, by injecting SRAM with various faults for testing, the CAM-based SRAM BISR circuit developed in this thesis has been proved to have great performance.
[1] Altera Corporation, Quartus II Handbook, 2005.
[2] Altera Corporation, NIOS II Processor Reference Handbook, Altera Corporation, 2003.
[3] Altera Corporation, Avalon Bus Specification Reference Manual, Altera Corporation, 2002.
[4] Michael D. Ciletti, Advanced Digital System Design with the Verilog HDL, Prentice Hall, 2003.
[5] Teuvo Kohonen, Content-Addressable Memories, 2nd edition, Springer-Verlag Berlin Heidelberg, 1987.
[6] Kostas Pagiamtzis and Ali Sheikholeslami, “Content-Addressable Memory (CAM) Circuits and Architectures: A Tutorial and Survey,” IEEE Journal of Solid-State Circuits, Vol. 41, No. 3, pp. 712-727, March 2006.
[7] Kenneth J. Schultz and P. Glenn Gulak, “Architectures for Large-Capacity CAMs,” Integration, the VLSI Journal, Vol. 18, pp. 151-171, 1995.
[8] Yuanjiang Xie, Xiang Fu, Zijian He, Yang Zhao, Yu Hu, and Xiawei Li, “A Self-Repairable Microprocessor,” ECS Transactions, Vol. 18, No. 1, pp. 249-254, 2009.
[9] Alfredo Benso, Silvia Chiusano, Giorgio Di Natale, and Poalo Prinetto, “An On-Line BIST RAM Architecture With Self-Repair Capabilities,” IEEE Transactions on reliablity, Vol. 51, No. 1, pp. 123-128, March 2002.
[10] Masato Motomusa, Jun Toyoura, Kazumi Hirata, Hideyuki Ooka, Hachiro Yamada, and Tadayoshi Enomoto, “A 1.2-Million Transistor, 33-Mhz, 20-b Dictionary Search Processor (DISP) ULSI with a 160-kb CAM” IEEE Journal of Solid-State Circuits, Vol. 25, No. 5, October 1990.
[11] Akira Tanabe, Toshio Takeshima, Hiroki Koike, Yoshiharu Aimoto, Masahide Takada, Toshiyuki Ishijima,Naoki Kasai , Hiromitsu Hada, Kentaro Shibahara, Takemitsu Kunio, Takaho Tanigawa, Takanori Saeki, Masato Sakao, Hidenobu Miyamoto, Hiroshi Nozue, Shuichi Ohya, Tatsunori Murotani, Kuniaki Koyama, and Takashi Okuda, “A 30-ns 64-Mb DRAM with Built-in Self-Test and Self-Repair Function,” IEEE Journal of Solid-State Circuits, Vol. 27, No. 11, November 1992.
[12] Laung-Terng Wang, Chen-Wen Wu, and Xiaoqing Wen, VLSI Test Priniciples and Architectures, Elsevier Taiwan LLC, 2013.